IRF520S Vishay, IRF520S Datasheet
IRF520S
Specifications of IRF520S
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IRF520S Summary of contents
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... PAK (TO-263) IRF520SPbF SiHF520S-E3 IRF520S SiHF520S = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 9.2 A (see fig. 12 ≤ 175 ° IRF520S, SiHF520S Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 9 6 0.40 0.025 E 200 6.0 ...
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... IRF520S, SiHF520S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91018 S-82996-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91018_03 = 25 ° µs Pulse Width T = 175 ° 91018_04 = 175 °C C IRF520S, SiHF520S Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF520S, SiHF520S Vishay Siliconix 750 MHz iss 600 rss oss ds 450 C 300 C 150 Drain-to-Source Voltage ( 91018_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 9 Total Gate Charge (nC) 91018_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 oss rss 10 91018_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91018 S-82996-Rev. A, 19-Jan-09 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF520S, SiHF520S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS ...
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... IRF520S, SiHF520S Vishay Siliconix 91018_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 600 Top 500 Bottom 400 300 200 100 100 125 150 Starting T , Junction Temperature (° 3.8 A 6.5 A 9.2 A 175 Current regulator Same type as D.U.T. 50 kΩ ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF520S, SiHF520S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...