IRF520S Vishay, IRF520S Datasheet

MOSFET N-CH 100V 9.2A D2PAK

IRF520S

Manufacturer Part Number
IRF520S
Description
MOSFET N-CH 100V 9.2A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF520S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF520S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF520S
Manufacturer:
IR
Quantity:
8 000
Part Number:
IRF520S
Manufacturer:
IR
Quantity:
12 500
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91018
S-82996-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 9.2 A, dI/dt ≤ 110 A/µs, V
= 25 V, starting T
G D
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 3.5 mH, R
c
a
b
DD
V
GS
≤ V
e
= 10 V
DS
G
, T
N-Channel MOSFET
e
Single
J
100
≤ 175 °C.
4.4
7.7
16
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.27
GS
AS
at 10 V
= 9.2 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF520SPbF
SiHF520S-E3
IRF520S
SiHF520S
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF520S, SiHF520S
design,
- 55 to + 175
LIMIT
0.025
300
± 20
0.40
100
200
9.2
6.5
9.2
6.0
3.7
5.5
37
60
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

Related parts for IRF520S

IRF520S Summary of contents

Page 1

... PAK (TO-263) IRF520SPbF SiHF520S-E3 IRF520S SiHF520S = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 9.2 A (see fig. 12 ≤ 175 ° IRF520S, SiHF520S Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 9 6 0.40 0.025 E 200 6.0 ...

Page 2

... IRF520S, SiHF520S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91018 S-82996-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91018_03 = 25 ° µs Pulse Width T = 175 ° 91018_04 = 175 °C C IRF520S, SiHF520S Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF520S, SiHF520S Vishay Siliconix 750 MHz iss 600 rss oss ds 450 C 300 C 150 Drain-to-Source Voltage ( 91018_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 9 Total Gate Charge (nC) 91018_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 oss rss 10 91018_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91018 S-82996-Rev. A, 19-Jan-09 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF520S, SiHF520S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS ...

Page 6

... IRF520S, SiHF520S Vishay Siliconix 91018_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 600 Top 500 Bottom 400 300 200 100 100 125 150 Starting T , Junction Temperature (° 3.8 A 6.5 A 9.2 A 175 Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF520S, SiHF520S Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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