IRF540S Vishay, IRF540S Datasheet

MOSFET N-CH 100V 28A D2PAK

IRF540S

Manufacturer Part Number
IRF540S
Description
MOSFET N-CH 100V 28A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF540S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
77 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
1700pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF540S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF540STRLPBF
Manufacturer:
IR
Quantity:
14 300
Part Number:
IRF540STRRPBF
Manufacturer:
SONY
Quantity:
532
Part Number:
IRF540STRRPBF
Manufacturer:
IR
Quantity:
6 000
Part Number:
IRF540STRRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91022
S10-1442-Rev. C, 05-Jul-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 28 A, dI/dt  170 A/μs, V
G D
= 25 V, starting T
()
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 440 μH, R
c
a
b
DD
V
GS
 V
e
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
Single
D
SiHF540S-GE3
IRF540SPbF
SiHF540S-E3
IRF540S
SiHF540S
 175 °C.
100
72
11
32
2
PAK (TO-263)
g
= 25 , I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
0.077
V
GS
AS
at 10 V
= 28 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
2
Definition
PAK (TO-263) is suitable for high current applications
D
SiHF540STRL-GE3
IRF540STRLPbF
SiHF540STL-E3
IRF540STRL
SiHF540STL
2
PAK (TO-263)
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
a
a
AR
GS
DS
AS
AR
D
D
stg
a
a
a
design,
IRF540S, SiHF540S
- 55 to + 175
LIMIT
0.025
300
± 20
D
SiHF540STRR-GE3
IRF540STRRPbF
SiHF540STR-E3
IRF540STRR
SiHF540STR
100
110
230
150
1.0
3.7
5.5
28
20
28
15
low
2
PAK (TO-263)
Vishay Siliconix
d
on-resistance
a
a
www.vishay.com
a
a
a
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF540S Summary of contents

Page 1

... IRF540STRL SiHF540S SiHF540STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for  (see fig. 12  175 ° IRF540S, SiHF540S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263) a SiHF540STRR-GE3 a a IRF540STRRPbF a a SiHF540STR- IRF540STRR a a SiHF540STR SYMBOL LIMIT V 100 DS V ± ...

Page 2

... IRF540S, SiHF540S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91022 S10-1442-Rev. C, 05-Jul-10 4 µs Pulse Width ° 91022_03 = 25 ° µs Pulse Width T = 175 ° 91022_04 = 175 °C C IRF540S, SiHF540S Vishay Siliconix 2 10 ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF540S, SiHF540S Vishay Siliconix 3000 MHz iss 2400 rss oss ds 1800 1200 C 600 Drain-to-Source Voltage ( 91022_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91022_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 oss rss 10 91022_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91022 S10-1442-Rev. C, 05-Jul-10 Fig. 10a - Switching Time Test Circuit 90 % 150 175 10 % Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF540S, SiHF540S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ...

Page 6

... IRF540S, SiHF540S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91022_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 600 Top ...

Page 7

... D.U.T. - device under test Driver gate drive Period P.W. D.U.T. l waveform SD Body diode forward current dI/dt D.U.T. V waveform DS Diode recovery dV/dt Body diode forward drop Inductor current Ripple ≤ Note for logic level devices GS Fig For N-Channel IRF540S, SiHF540S Vishay Siliconix + - + P. Period www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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