IRF5803 International Rectifier, IRF5803 Datasheet

MOSFET P-CH 40V 3.4A 6-TSOP

IRF5803

Manufacturer Part Number
IRF5803
Description
MOSFET P-CH 40V 3.4A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF5803

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
112 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
1110pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Description
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
These P-channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
®
power MOSFET with R
®
Power MOSFETs from
Parameter
Parameter
ƒ
ƒ
GS
GS
ƒ
DS(on)
DS(on)
@ -10V
@ -10V
G
D
D
V
-40V
DSS
1
3
2
T op V iew
R
HEXFET
6
5
4
DS(on)
-55 to + 150
112@V
190@V
Max.
Max.
62.5
D
S
D
-3.4
-2.7
± 20
A
-40
-27
2.0
1.3
16
max (m
GS
GS
®
IRF5803
= -10V
= -4.5V
Power MOSFET
TSOP-6
PD-94015
-3.4A
-2.7A
mW/°C
Units
Units
I
°C/W
D
W
°C
V
A
V
1
03/05/01

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IRF5803 Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com V DSS -40V iew DS(on) DS(on) @ -10V GS @ -10V GS ƒ ƒ ƒ PD-94015 IRF5803 ® HEXFET Power MOSFET R max (m I DS(on) D 112@V = -10V -3.4A GS 190@V = -4.5V -2. TSOP-6 Max. Units -40 V -3.4 -2 ...

Page 2

... IRF5803 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 ° 1.5  ° 150 C J 1.0 0.5 = -25V 0.0 -60 -40 -20 6.0 7.0 8.0 Fig 4. Normalized On-Resistance IRF5803 TOP BOTTOM - 2.7V -2.7V 20µs PULSE WIDTH Tj = 125° Drain-to-Source Voltage (V) -3. -10V 100 120 140 160 ° Junction Temperature ( ...

Page 4

... IRF5803 2000 0V 100 KHZ C iss = SHORTED C rss = C gd 1500 C oss = Ciss 1000 500 Coss Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100  ° 150 0.1 0.4 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms  0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF5803 D.U. Pulse Width µs Duty Factor d(on) ...

Page 6

... IRF5803 0.20 0.15 0. -3.4A 0.05 0.00 4.0 8.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.40 0.30 0.20 0.10 0.00 12.0 16.0 0.0 Fig 13. Typical On-Resistance Vs. 12V V GS Fig 14b. Gate Charge Test Circuit VGS = -4 ...

Page 7

... -250µA 2.4 2.0 1.6 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 0.001 75 100 125 150 Fig 16. Typical Power Vs. Time IRF5803 0.010 0.100 1.000 10.000 100.000 Time (sec) 7 ...

Page 8

... IRF5803 TSOP-6 Package Outline TSOP-6 Part Marking Information EXAMPLE: T HIS IS AN SI3443DV PART NUMBER WAFER LOT NUMBER CODE PART NUMBER CODE REFERENCE SI3443DV 3B = IRF5800 3C = IRF5850 3D = IRF5851 3E = IRF5852 3I = IRF5805 3J = IRF5806 DAT E CODE EXAMPLES : YWW = 9603 = 6C YWW = 9632 = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.03/01 IRF5803 TAC Fax: (310) 252-7903 9 ...

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