IRF620S Vishay, IRF620S Datasheet
IRF620S
Specifications of IRF620S
Available stocks
Related parts for IRF620S
IRF620S Summary of contents
Page 1
... IRF620STRL SiHF620STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 5.2 A (see fig. 12 ≤ 150 °C. J IRF620S, SiHF620S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF620STRRPbF a a SiHF620STR- IRF620STRR a a SiHF620STR SYMBOL LIMIT V 200 DS V ± ...
Page 2
... IRF620S, SiHF620S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... Drain-to-Source Voltage ( 91028_02 Fig Typical Output Characteristics, T Document Number: 91028 S-82998-Rev. B, 12-Jan-09 4 µs Pulse Width ° 91028_03 = 25 ° µs Pulse Width T = 150 ° 91028_04 = 150 °C C IRF620S, SiHF620S Vishay Siliconix 1 10 ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
Page 4
... IRF620S, SiHF620S Vishay Siliconix 750 MHz iss rss gd 600 oss ds 450 300 150 Drain-to-Source Voltage ( 91028_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 4 100 Total Gate Charge (nC) 91028_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss rss 91028_07 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91028 S-82998-Rev. B, 12-Jan-09 Fig. 10a - Switching Time Test Circuit 90 % 125 150 10 % Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 IRF620S, SiHF620S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ...
Page 6
... IRF620S, SiHF620S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91028_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 300 Top ...
Page 7
... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF620S, SiHF620S Vishay Siliconix + + www.vishay.com 7 ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...