IRF6215 International Rectifier, IRF6215 Datasheet
IRF6215
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IRF6215 Summary of contents
Page 1
... Junction-to-Ambient JA HEXFET Max. @ -10V GS @ -10V -9.0 GS 110 0.71 -6.6 -5.0 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91479B IRF6215 ® Power MOSFET V = -150V DSS R = 0.29 DS(on -13A D TO-220AB Units -13 A -44 W W/°C ± 310 mJ A ...
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... IRF6215 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... 2.0 1.5 1.0 0.5 0.0 A -60 -40 - Junction T em perature (° Fig 4. Normalized On-Resistance Vs. Temperature IRF6215 -4 .5V 2 0µ ° ...
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... IRF6215 iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. ...
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... Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 150 175 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF6215 D.U. µ d(off ...
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... IRF6215 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform ...
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... Fig 14. For P-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period [ V =10V GS Current di/dt Diode Recovery dv/ Forward Drop [ ] IRF6215 + *** ...
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... IRF6215 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...