IRF630S Vishay, IRF630S Datasheet

MOSFET N-CH 200V 9A D2PAK

IRF630S

Manufacturer Part Number
IRF630S
Description
MOSFET N-CH 200V 9A D2PAK
Manufacturer
Vishay
Datasheets

Specifications of IRF630S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Part Number
Manufacturer
Quantity
Price
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IRF630S
Manufacturer:
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l
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Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for low-
profile application.
Absolute Maximum Ratings
Description
www.irf.com
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
2
STG
J
D
GS
AS
AR
Pak is suitable for high current applications because of its
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
@T
2
Pak is a surface mount power package capable of
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
®
Power MOSFETs from
Parameter


GS
GS

@ 10V
@ 10V
G
TO-220AB
IRF630N
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to +175
S
D
IRF630NS
Max.
9.3
6.5
0.5
9.3
8.2
8.1
±20
82
37
94
D
2
Pak
®
R
Power MOSFET
V
DS(on)
DSS
I
D
IRF630NS
IRF630NL
= 9.3A
PD - 94005B
IRF630N
= 200V
IRF630NL
= 0.30Ω
TO-262
Units
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
1
10/08/04

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