IRF640N International Rectifier, IRF640N Datasheet

MOSFET N-CH 200V 18A TO-220AB

IRF640N

Manufacturer Part Number
IRF640N
Description
MOSFET N-CH 200V 18A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF640N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1160pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF640N

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Description
Absolute Maximum Ratings
Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.
www.irf.com
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
2
STG
J
D
GS
AS
AR
Pak is suitable for high current applications because of its
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
@T
2
Pak is a surface mount power package capable of
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
®
Power MOSFETs from
Parameter


GS
GS

@ 10V
@ 10V
G
TO-220AB
IRF640N
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to +175
S
D
IRF640NS
Max.
150
± 20
247
1.0
8.1
18
13
72
18
15
D
2
Pak
®
R
Power MOSFET
V
DS(on)
DSS
I
D
IRF640NS
IRF640NL
= 18A
PD - 94006A
IRF640N
= 200V
IRF640NL
= 0.15Ω
TO-262
Units
W/°C
V/ns
10/08/04
mJ
mJ
°C
W
A
V
A
1

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IRF640N Summary of contents

Page 1

... The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRF640NL) is available for low- profile application. Absolute Maximum Ratings Parameter 25° ...

Page 2

... IRF640N/S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 10 4.5V 1 ° 0.1 100 0.1 3 3.0 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 0 9.0 10.0 IRF640N/S/L VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 18A V = 10V ...

Page 4

... IRF640N/S/L 2500 0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = 1500 Ciss 1000 Coss 500 Crss Drain-to-Source Voltage (V) 100 ° 175 0.1 0.2 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD www.irf.com 100 1000 1000 OPERATION IN THIS AREA LIMITED 100 10 ° 175 Single Pulse ...

Page 5

... SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 www.irf.com 90% 90% 150 175 150 175 ° 10% 10% ° Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF640N/S ≤ 1 ≤ 1 ≤ 0.1 % ≤ 0 d(on) d(on d(off) d(off Notes ...

Page 6

... IRF640N/S D.U 20V 0.01 Ω Charge www.irf.com 600 15V 500 DRIVER 400 + - V DD 300 A 200 100 V (BR)DSS 0 25 Starting T , Junction Temperature ( TOP 4.4A 7.6A BOTTOM 11A 50 75 100 125 150 ° J Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D ...

Page 7

... D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent For N-Channel HEXFET www.irf.com + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® Power MOSFETs IRF640N/S =10V ...

Page 8

... IRF640N/S/L Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPL HIS 1010 ...

Page 9

... INT ERNAT IONAL LOGO AS SE MBLY LOT CODE www.irf.com PART NUMBER INTE RNATIONAL RECT IFIER F 530S LOGO DAT E CODE YEAR 0 = 2000 AS S EMBLY WEEK 02 LOT CODE LINE L PART NUMBE R F530S DAT E CODE SIGNAT E S LEAD-FREE PRODUCT (OPT IONAL 2000 WEE MBLY CODE IRF640N/S/L 9 ...

Page 10

... IRF640N/S/L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 SEMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" OR www.irf.com PART NUMBER INT ERNAT IONAL RECT IFIER ...

Page 11

... V ≤ ≤ 175° This product has been designed and qualified for the automotive [Q101] (IRF640N) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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