IRF6609 International Rectifier, IRF6609 Datasheet

IRF6609

Manufacturer Part Number

IRF6609

Description

MOSFET N-CH 20V 31A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6609.pdf (11 pages)

Specifications of IRF6609

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

2 mOhm @ 31A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

31A

Vgs(th) (max) @ Id

2.45V @ 250µA

Gate Charge (qg) @ Vgs

69nC @ 4.5V

Input Capacitance (ciss) @ Vds

6290pF @ 10V

Power - Max

1.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MT

Configuration

Single Quad Drain Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.6 m Ohms

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

31 A

Power Dissipation

89 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Fall Time

9.8 ns

Minimum Operating Temperature

- 40 C

Rise Time

95 ns

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

IRF6609TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6609TRPBF

Manufacturer:

International Rectifier

Quantity:

135

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Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)

Description

The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation

of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck

operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particu-

larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

Notes through ˆ are on page 10

STG

θJA

θJC

θJ-PCB

Techniques

Low Conduction Losses

Low Switching Losses

Ideal Synchronous Rectifier MOSFET

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount

@ T

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Case

Junction-to-PCB Mounted

Parameter

™

@ 10V

Ãf

20V

DSS

Typ.

12.5

–––

1.0

2.6mΩ@V

2.0mΩ@V

-40 to + 150

HEXFET

DS(on)

Max.

0.022

150

250

±20

1.8

2.8

Max.

max

–––

1.4

IRF6609

DirectFET™ ISOMETRIC

Power MOSFET

= 4.5V

= 10V

packaging to achieve the

Units

W/°C

°C/W

46nC

°C

10/05/05

Related parts for IRF6609

IRF6609 Summary of contents

Page 1

... IMPROVING previous best thermal resistance by 80%. The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 150°C 10 25°C 1 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss Coss 1000 Crss 100 ...

Page 5

Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 1 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL ...

Page 6

Duty Cycle = Single Pulse 100 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-06 1.0E-05 250 200 150 100 Starting Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Temperature ...

Page 7

Gate-to-Source Voltage (V) Fig 14. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current ...

Page 8

D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 19. DirectFET™ Substrate and PCB Layout, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 9

DirectFET™ Outline Dimension, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking www.irf.com DIMENSIONS IMPERIAL METRIC MAX ...

Page 10

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6609). For 1000 parts on 7" reel, order IRF6609TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) METRIC IMPERIAL MIN CODE MIN MAX MAX A 330.0 12 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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