IRF6623 International Rectifier, IRF6623 Datasheet

MOSFET N-CH 20V 16A DIRECTFET

IRF6623

Manufacturer Part Number
IRF6623
Description
MOSFET N-CH 20V 16A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6623

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1360pF @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric ST
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6623TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6623TR1
Manufacturer:
IR
Quantity:
890
Part Number:
IRF6623TR1
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6623TR1
Manufacturer:
IR
Quantity:
15 727
Part Number:
IRF6623TR1PBF
Manufacturer:
International Rectifier
Quantity:
30 666
Part Number:
IRF6623TR1PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF6623TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF6623TRPBF
Quantity:
25 780
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Notes  through ˆ are on page 2
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
Description
The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6623 has been optimized for parameters that are
critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the
control FET socket.
www.irf.com
V
V
I
I
I
I
P
P
P
E
I
T
T
R
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
AR
J
STG
DS
GS
D
D
D
AS
θJA
θJA
θJA
θJC
θJ-PCB
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with Existing Surface Mount Techniques
@ T
@ T
@ T
@T
@T
@T
SQ
C
A
A
C
A
A
= 25°C
= 25°C
= 70°C
= 25°C
= 25°C
= 70°C
SX
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
ST
Ù
f
f
j
fj
gj
hj
Parameter
Parameter
GS
GS
GS
MQ
@ 10V
@ 10V
@ 10V
d
Ãf
f
MX
MT
V
20V
DSS
Typ.
12.5
–––
–––
1.0
20
ST
9.7mΩ@V
5.7mΩ@V
R
-40 to + 150
HEXFET
DS(on)
Max.
0.017
120
±20
1.4
2.1
20
55
16
13
42
43
40
GS
GS
max
Max.
= 4.5V
®
= 10V
–––
–––
–––
3.0
IRF6623
58
DirectFET™ ISOMETRIC
Power MOSFET
TM
Qg(typ.)
packaging to
11nC
Units
Units
W/°C
°C/W
mJ
°C
W
V
A
A
1
12/21/05

Related parts for IRF6623

IRF6623 Summary of contents

Page 1

... The IRF6623 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

... IRF6623 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... Fig 4. Normalized On-Resistance vs. Temperature 100 Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage IRF6623 1000 TOP 100 BOTTOM 10 2.5V ≤ 60µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1 ...

Page 4

... IRF6623 1000.0 100 150°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0 ...

Page 5

... Fig 16a. Gate Charge Test Circuit www.irf.com 15A 10.0 Fig 13. Maximum Avalanche Energy Vs. Drain Current DRIVER + Fig 14b. Unclamped Inductive Waveforms 90 10 Fig 15b. Switching Time Waveforms + IRF6623 200 TOP 160 BOTTOM 120 100 Starting Junction Temperature (°C) V (BR)DSS d(on) d(off ...

Page 6

... IRF6623 D.U.T + ƒ • • - • + ‚ -  R • • • • Fig 17. DirectFET™ Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. ...

Page 7

... F 0.62 0.023 0.58 0.024 G 0.79 0.030 0.75 0.031 H 0.57 0.021 0.53 0.022 0.30 0.010 J 0.26 0.012 0.98 0.035 K 0.88 0.039 L 2.28 0.086 2.18 0.090 M 0.70 0.023 0.59 0.028 N 0.08 0.001 0.03 0.003 0.17 0.003 P 0.08 0.007 IRF6623 7 ...

Page 8

... IRF6623 DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6623). For 1000 parts on 7" reel, order IRF6623TR1 STANDARD OPTION (QTY 4800) CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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