IRF710S Vishay, IRF710S Datasheet
IRF710S
Specifications of IRF710S
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IRF710S Summary of contents
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... ° 100 ° ° °C A for Ω 2.0 A (see fig. 12 ≤ 150 °C. J IRF710S, SiHF710S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF710STRRPbF a a SiHF710STR-E3 a IRF710STRR a SiHF710STR SYMBOL LIMIT V 400 DS V ± 2.0 ...
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... IRF710S, SiHF710S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Drain-to-Source Voltage ( 91042_02 Fig Typical Output Characteristics, T Document Number: 91042 S-83000-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91042_03 = 25 ° µs Pulse Width T = 150 °C C 91042_04 = 150 °C C IRF710S, SiHF710S Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF710S, SiHF710S Vishay Siliconix 400 MHz iss rss 300 oss ds C iss 200 C oss 100 C rss Drain-to-Source Voltage ( 91042_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 200 Total Gate Charge (nC) 91042_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91042_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91042 S-83000-Rev. A, 19-Jan-09 Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms 0 Rectangular Pulse Duration (s) 1 IRF710S, SiHF710S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRF710S, SiHF710S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91042_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 300 Top ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF710S, SiHF710S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...