IRF7220 International Rectifier, IRF7220 Datasheet

MOSFET P-CH 14V 11A 8-SOIC

IRF7220

Manufacturer Part Number
IRF7220
Description
MOSFET P-CH 14V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7220

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
14V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
125nC @ 5V
Input Capacitance (ciss) @ Vds
8075pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7220PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7220TR
Manufacturer:
IR
Quantity:
3 607
Part Number:
IRF7220TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7220TRPBF
Quantity:
10 420
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
www.irf.com
V
I
I
I
P
P
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
@ T
@ T
JA
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Power Dissipation
Power Dissipation
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
T op V ie w
HEXFET
8
7
6
5
-55 to + 150
Max.
Max.
±8.8
0.02
D
D
D
±11
±88
110
± 12
50
D
-14
2.5
1.6
A
SO-8
®
R
IRF7220
DS(on)
Power MOSFET
V
DSS
= 0.012
PD- 91850C
= -14V
Units
Units
W/°C
°C/W
W
mJ
°C
V
A
V
1
7/16/99

Related parts for IRF7220

IRF7220 Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Max. @ -4. -4.5V ±8.8 GS 0.02 - 150 Max. ƒ PD- 91850C IRF7220 ® Power MOSFET -14V DSS 0.012 D DS(on) SO-8 Units -14 V ±11 A ±88 2.5 W 1.6 W/°C 110 mJ ± °C Units 50 °C/W 1 ...

Page 2

... IRF7220 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... - lta Fig 3. Typical Transfer Characteristics www.irf.com -1. Fig 2. Typical Output Characteristics 2 1.5 1.0 0 0.0 A -60 -40 -20 6.0 7.0 8.0 Fig 4. Normalized On-Resistance IRF7220 0µ LSE 50°C J -1. rain-to-Sou rce V oltage ( -11A V = -4. 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature ...

Page 4

... IRF7220 0V 1kHz iss oss rss rain-to-So urc e Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 150° 25° 0.1 0.0 0.5 1.0 1 rce-to Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage -11A D SH ORTE Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED ...

Page 5

... Starting T , Junction Temperature ( C) Fig 10. Maximum Avalanche Energy Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7220 I D TOP -4.9A -8.8A BOTTOM -11A 50 75 100 125 150 ° J Vs. Drain Current ...

Page 6

... IRF7220 SO-8 Package Details (. (. ( (. Part Marking ° (. ILLIM .05 32 .06 88 1 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3. .635 .22 84 .244 0 5.8 0 6.20 K .01 1 .01 9 0.2 8 ...

Page 7

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ www.irf.com 0 CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7220 . . 7/99 7 ...

Related keywords