IRF7233 International Rectifier, IRF7233 Datasheet

MOSFET P-CH 12V 9.5A 8-SOIC

IRF7233

Manufacturer Part Number
IRF7233
Description
MOSFET P-CH 12V 9.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7233

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 9.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
9.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 5V
Input Capacitance (ciss) @ Vds
6000pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7233

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7233
Manufacturer:
IR
Quantity:
1 000
Part Number:
IRF7233
Manufacturer:
TOS
Quantity:
3 000
Part Number:
IRF7233
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7233 TR
Manufacturer:
IR
Quantity:
1 000
Part Number:
IRF72333
Quantity:
3 008
Part Number:
IRF7233PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7233TR
Manufacturer:
IR
Quantity:
3 490
Part Number:
IRF7233TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7233TR
Quantity:
8 000
Part Number:
IRF7233TRPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
www.irf.com
V
I
I
I
P
P
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
@ T
@ T
JA
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Power Dissipation
Power Dissipation
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
T op V ie w
HEXFET
8
7
6
5
-55 to + 150
Max.
Max.
±9.5
±6.0
0.02
D
D
D
±76
± 12
50
D
-12
2.5
1.6
A
60
SO-8
®
R
IRF7233
DS(on)
Power MOSFET
V
DSS
= 0.020
PD- 91849D
= -12V
Units
Units
W/°C
°C/W
W
mJ
°C
V
A
V
1
7/7/99

Related parts for IRF7233

IRF7233 Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Max. @ -4.5V ±9 -4.5V ±6.0 GS 0.02 - 150 Max. ƒ PD- 91849D IRF7233 ® Power MOSFET -12V DSS 0.020 D DS(on) SO-8 Units - ±76 2.5 W 1.6 W/° ± °C Units 50 °C/W 1 7/7/99 ...

Page 2

... IRF7233 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... 1.0 1 lta Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics 2 1 ° 1.0 0 0.0 A -60 -40 -20 2.5 3.0 Fig 4. Normalized On-Resistance IRF7233 µ 50° rain-to-Sou rce V oltage ( -9. -4. 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature ...

Page 4

... IRF7233 0V 1kHz iss rss iss rss rain-to-So urc e Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 150° 25° 0.0 1 rce-to Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage ORTE Fig 6. Typical Gate Charge Vs. 1000 100 Single Pulse 0.1 2.0 3.0 Fig 8. Maximum Safe Operating Area -9 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 140 120 100 125 150 25 ° Starting T , Junction Temperature ( C) Fig 10. Maximum Avalanche Energy Notes: 1. Duty factor Peak 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7233 I D TOP -4.2A -7.6A BOTTOM -9. 100 125 150 ° J Vs. Drain Current ...

Page 6

... IRF7233 SO-8 Package Details 0 .25 (. SIO 4.5 M -198 TRO L LIN SIO SIO ILLIM ( S TLIN JED TLINE SIO EXCE (.00 6 STRA TE.. 6 Part Marking ° 0 .10 (. LIM .0532 .0688 1 . .0040 .0098 0 .10 0 .25 B .014 .018 0 . 075 .0 098 0 .19 0.25 D ...

Page 7

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ www.irf.com 0 CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7233 . . 7/99 7 ...

Related keywords