IRF730S Vishay, IRF730S Datasheet
IRF730S
Specifications of IRF730S
Available stocks
Related parts for IRF730S
IRF730S Summary of contents
Page 1
... SMD-220 IRF730SPbF SiHF730S-E3 IRF730S SiHF730S = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 5.5 A (see fig. 12 ≤ 150 °C. J IRF730S, SiHF730S Vishay Siliconix device design, low on-resistance SMD-220 a IRF730STRLPbF a SiHF730STL-E3 a IRF730STRL a SiHF730STL SYMBOL LIMIT V 400 DS V ± 5 3 0.59 ...
Page 2
... IRF730S, SiHF730S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91048 S-81276-Rev. A, 16-Jun- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF730S, SiHF730S Vishay Siliconix www.vishay.com 3 ...
Page 4
... IRF730S, SiHF730S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91048 S-81276-Rev. A, 16-Jun-08 ...
Page 5
... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91048 S-81276-Rev. A, 16-Jun- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRF730S, SiHF730S Vishay Siliconix D.U. d(off www.vishay.com 5 ...
Page 6
... IRF730S, SiHF730S Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91048 ...
Page 7
... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF730S, SiHF730S Vishay Siliconix + + www.vishay.com 7 ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...