IRF7314 International Rectifier, IRF7314 Datasheet

MOSFET 2P-CH 20V 5.3A 8-SOIC

IRF7314

Manufacturer Part Number
IRF7314
Description
MOSFET 2P-CH 20V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7314

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7314

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Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( T
Description
Thermal Resistance Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
Parameter
A
= 25°C Unless Otherwise Noted)
T
T
T
T
PRELIMINARY
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
G 2
G 1
S2
S 1
Symbol
T
dv/dt
J,
V
V
E
E
I
I
DM
AR
T
I
GS
DS
S
AS
AR
1
2
3
4
STG
T op V iew
Symbol
R
HEXFET
JA
8
6
5
7
-55 to + 150
Maximum
D 1
D 1
D 2
D 2
± 12
0.20
S O -8
-2.5
-2.9
-5.0
150
-20
-21
-5.3
-4.3
2.0
1.3
®
R
IRF7314
Limit
Power MOSFET
DS(on)
62.5
V
DSS
PD - 9.1436B
= 0.058
= -20V
Units
Units
°C/W
V/ ns
mJ
mJ
°C
W
A
A
11/18/97

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IRF7314 Summary of contents

Page 1

... iew = 25°C Unless Otherwise Noted) A Symbol 25° 70° 25° 70° dv/ STG Symbol 9.1436B IRF7314 ® HEXFET Power MOSFET -20V DSS 0.058 D 2 DS(on Maximum Units -20 ± 12 -5.3 -4.3 A -21 -2.5 2.0 W 1.3 150 mJ -2.9 A 0. 150 °C Limit Units 62.5 JA ° ...

Page 2

... IRF7314 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics 100 10 ° 0.1 10 100 ° = -10V DS 0.1 4.0 4.5 5.0 IRF7314 VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V -1.50V 1 20µs PULSE WIDTH T = 150 Drain-to-Source Voltage (V) DS Fig 2 ...

Page 4

... IRF7314 2 -2.9A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature 0.08 0.07 0.06 0.05 0.04 0.03 0.0 2 Gate-to-Source Voltage ( Fig 7. Typical On-Resistance Vs. Gate Voltage V = -4. -5. 4.0 6.0 8.0 0.8 0 0.4 0.2 0 Drain Current (A) D Fig 6. Typical On-Resistance Vs. Drain ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7314 I = -2. -16V Total Gate Charge (nC) G Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage P DM Notes: 1. Duty factor Peak ...

Page 6

... IRF7314 Package Outline SO8 Outline 0.25 (.010 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. ...

Page 7

... IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com 330.00 (12.992 GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7314 . . 14.40 ( .566 ) 12.40 ( .488 ) 11/97 ...

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