IRF7325 International Rectifier, IRF7325 Datasheet

MOSFET 2P-CH 12V 7.8A 8-SOIC

IRF7325

Manufacturer Part Number
IRF7325
Description
MOSFET 2P-CH 12V 7.8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7325

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7.8A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 4.5V
Input Capacitance (ciss) @ Vds
2020pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7325
Q1153815D

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7325
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7325TR
Manufacturer:
MICROCOMMERCIALCO
Quantity:
3 900
Part Number:
IRF7325TRPBF
Manufacturer:
IR
Quantity:
3 134
Part Number:
IRF7325TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7325TRPBF
Quantity:
8 420
Absolute Maximum Ratings
Thermal Resistance
New P-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
www.irf.com
Symbol
R
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
@ T
@ T
JL
JA
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
device
Junction-to-Drain Lead
Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
design that HEXFET Power
power MOSFETs from
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G 2
G 1
S2
S 1
V
-12V
DSS
1
2
3
4
T o p V ie w
Typ.
–––
–––
R
HEXFET
8
7
6
5
DS(on)
-55 to + 150
24@V
33@V
49@V
Max.
± 8.0
-7.8
-6.2
-12
-39
2.0
1.3
D1
D 1
D 2
D 2
16
GS
GS
GS
max (m
®
IRF7325
= -4.5V
= -2.5V
= -1.8V
Power MOSFET
Max.
62.5
20
SO-8
PD- 94094
±
±
±
mW/°C
7.8A
6.2A
3.9A
Units
Units
I
°C/W
W
D
°C
V
A
V
1
2/5/01

Related parts for IRF7325

IRF7325 Summary of contents

Page 1

... V R DSS DS(on) -12V 24@V 33@V 49 Max. @ -4. -4.5V GS ± 8.0 - 150 Typ. ––– ––– PD- 94094 IRF7325 ® Power MOSFET max ( -4.5V 7.8A ± -2.5V 6.2A ± -1.8V 3.9A ± SO-8 Units -12 V -7.8 -6.2 A -39 2.0 W 1.3 16 mW/° ...

Page 2

... IRF7325 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... TOP BOTTOM 10 1 ° 0.1 10 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -10V 0.0 2.5 3.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7325 VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V -1.2V -1.2V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -7. ...

Page 4

... IRF7325 3000 0V MHZ C iss = rss = C gd 2500 C oss = Ciss 2000 1500 1000 Coss 500 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 C ° ° 0.1 0.2 0.6 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage -7.8A D SHORTED ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7325 D.U. µ d(on) r d(off ...

Page 6

... IRF7325 0.05 0.04 0. -7.8A 0.02 0.01 0.0 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.08 0.06 0.04 0.02 0 8.0 10.0 2.0 Fig 13. Typical On-Resistance Vs. Current Regulator Same Type as D.U.T. ...

Page 7

... Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 100 -250µ 100 125 150 0.001 Fig 16. Typical Power Vs. Time IRF7325 0.010 0.100 1.000 10.000 100.000 Time (sec) 7 ...

Page 8

... IRF7325 SO-8 Package Details 0.25 [.010 NOT ES: 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 0 Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 2/01 IRF7325 . . TAC Fax: (310) 252-7903 9 ...

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