IRF7326D2 International Rectifier, IRF7326D2 Datasheet

MOSFET P-CH 30V 3.6A 8-SOIC

IRF7326D2

Manufacturer Part Number
IRF7326D2
Description
MOSFET P-CH 30V 3.6A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7326D2

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
100 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Continuous Drain (id) @ 25° C
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7326D2TR
Quantity:
1 950
Description
Absolute Maximum Ratings (T
Thermal Resistance Ratings
Notes:
www.irf.com
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Parameter
R
Parameter
I
I
I
P
P
V
dv/dt
T
D
D
DM
D
D
GS
J,
JA
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
I
Pulse width
Surface mounted on FR-4 board, t
Co-packaged HEXFET
and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low V
Generation 5 Technology
SO-8 Footprint
@ T
@ T
SD
T
@T
@T
STG
A
A
A
A
-1.8A, di/dt
= 25°C
= 70°C
= 25°C
= 70°C
F
Schottky Rectifier
300µs; duty cycle
-90A/µs, V
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Junction-to-Ambient
DD
®
Power MOSFET
V
2%
(BR)DSS
10sec.
A
, T
= 25°C unless otherwise noted)
J
150°C
A
S
G
A
FETKY MOSFET / Schottky Diode
1
2
3
4
Top Vie w
8
7
6
5
-55 to +150
Maximum
IRF7326D2
K
K
D
D
± 20
Maximum
-3.6
-2.9
-5.0
-29
2.0
1.3
16
62.5
Schottky Vf = 0.52V
R
DS(on)
V
DSS
S O -8
PD - 93763
= -30V
= 0.10
Units
mW/°C
°C/W
Units
V/ns
°C
W
A
V
1
8/19/99

Related parts for IRF7326D2

IRF7326D2 Summary of contents

Page 1

... Pulse width 300µs; duty cycle Surface mounted on FR-4 board, t www.irf.com FETKY MOSFET / Schottky Diode Top Vie w = 25°C unless otherwise noted 150°C (BR)DSS J 2% 10sec 93763 IRF7326D2 V = -30V 8 K DSS 0.10 DS(on Schottky Vf = 0.52V Maximum Units -3.6 A -2.9 -29 2 ...

Page 2

... IRF7326D2 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... G ate -to-Source Volta ge ( Fig 3. Typical Transfer Characteristics www.irf.com Power Mosfet Characteristics TOP BOTTOM - 4. 0.1 Fig 2. Typical Output Characteristics 2 1.5 J 1 -60 Fig 4. Normalized On-Resistance IRF7326D2 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V -4.5V 2 0µ 0° rain-to-S ource V oltage ( . -40 - Junction T em perature (° ...

Page 4

... IRF7326D2 iss iss rss Drain -to -S ource V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0° ° 0.1 0.0 0.3 0.6 0 ource-to-D rain Vo ltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics -3. - Fig 6. Typical Gate Charge Vs. 100 150 Single Pulse 1.2 1.5 Fig 8 ...

Page 5

... VGS = -4.5V 0.20 0.10 0. Drain Current (A) D Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com Power Mosfet Characteristics 0.01 0 Rectangular Pulse Duration (sec) 1 0.14 0.12 0.10 VGS = -10V 0.08 0. Fig 11. Typical On-Resistance Vs. Gate IRF7326D2 Notes: 1. Duty factor Peak thJA -3. Gate-to-Source Voltage (V) GS Voltage 100 ...

Page 6

... IRF7326D2 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Fig Typical Forward Voltage Drop Characteristics ° ° °C J Reverse Current Vs. Reverse 0 Fig.14 - Maximum Allowable Ambient T = 150°C J 125°C 100°C 75°C 50°C 25° Reverse Voltage - V (V) R Fig ...

Page 7

... SIO 4.5 M -198 TRO L LIN SIO SIO ILLIM ( S TLIN JED TLINE SIO EXCE (.00 6 STRA TE.. 6 Part Marking (IRF7101 example ) www.irf.com ° 0 .10 (. IRF7326D2 LIM .0532 .0688 1 . .0040 .0098 0 .10 0 .25 B .014 .018 0 . 075 .0 098 0 .19 0. .80 4.98 E .150 .157 3 ...

Page 8

... IRF7326D2 Tape and Reel 8 7 OTE ION : M IL LIM ION (INC & - LLIN ILL LIN -481 & -541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...

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