IRF7328 International Rectifier Corp., IRF7328 Datasheet

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IRF7328

Manufacturer Part Number
IRF7328
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Quantity
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Part Number:
IRF7328
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7328PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7328TRPBF
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IRF7328TRPBF
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Description
Absolute Maximum Ratings
Thermal Resistance
New trench HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
www.irf.com
V
I
I
I
P
P
T
R
V
D
D
DM
Trench Technology
Ultra Low On-Resistance
Available in Tape & Reel
J
DS
D
D
Dual P-Channel MOSFET
GS
@ T
@ T
JA
, T
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
device
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
design that HEXFET power
®
Power MOSFETs
Parameter
Parameter

GS
GS
ƒ
ƒ
ƒ
@ -10V
@ -10V
from
G 2
G 1
S2
S 1
V
-30V
DSS
1
2
3
4
T o p V ie w
HEXFET
32m @V
21m @V
8
7
6
5
-55 to + 150
R
DS(on)
D 1
D 1
D 2
D 2
Max.
Max.
62.5
-8.0
-6.4
-30
-32
2.0
1.3
± 20
16
®
GS
GS
IRF7328
Power MOSFET
max
= -4.5V
= -10V
SO-8
PD -94000
-8.0A
-6.8A
mW/°C
I
Units
Units
°C/W
D
°C
W
W
V
A
V
1
10/04/00

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IRF7328 Summary of contents

Page 1

... Maximum Junction-to-Ambient JA www.irf.com HEXFET V DSS -30V 1 from -10V GS @ -10V GS  ƒ ƒ ƒ PD -94000 IRF7328 ® Power MOSFET R max I DS(on) D 21m @V = -10V -8.0A GS 32m @V = -4.5V -6. SO-8 Max. Units ...

Page 2

... IRF7328 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... BOTTOM -2.7V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V DS 0.0 5.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7328 VGS TOP -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.7V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) -8. -10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature ...

Page 4

... IRF7328 4000 1MHz iss rss oss ds gd 3000 C iss 2000 1000 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 0.1 0.2 0.4 0.6 0.8 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRF7328 D.U. µ d(off ...

Page 6

... IRF7328 0.060 0.050 0.040 -8.0A 0.030 0.020 0.010 0.000 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.100 0.075 0.050 0.025 0.000 8.0 9.0 10 Fig 13. Typical On-Resistance Vs. Same Type as D.U.T. ...

Page 7

... STRA TE.. 6 Part Marking www.irf.com ° IRF7328 LIM .0532 .0688 1 .35 1 ...

Page 8

... IRF7328 Tape and Reel ( ...

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