IRF7342 International Rectifier, IRF7342 Datasheet

MOSFET 2P-CH 55V 3.4A 8-SOIC

IRF7342

Manufacturer Part Number
IRF7342
Description
MOSFET 2P-CH 55V 3.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7342

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7342

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
R
V
I
I
I
P
P
V
V
E
dv/dt
T
D
D
DM
J,
DS
D
D
GS
GSM
AS
@ T
@ T
JA
@T
@T
T
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G 2
G 1
S2
S 1
1
2
3
4
T op V iew
Typ.
–––
HEXFET
8
7
6
5
-55 to + 150
Max.
0.016
D 1
D 1
D 2
-3.4
-2.7
± 20
114
D 2
-55
-27
2.0
1.3
5.0
30
S O -8
®
R
IRF7342
DS(on)
Power MOSFET
V
Max.
62.5
DSS
= 0.105
= -55V
PD -91859
Units
Units
W/°C
°C/W
V/ns
W
°C
V
A
V
V
1
2/24/99

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IRF7342 Summary of contents

Page 1

... STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET iew Max. @ 10V GS @ 10V GS 0.016 - 150 Typ. ––– PD -91859 IRF7342 ® Power MOSFET V = -55V DSS 0.105 DS(on Units -55 V -3.4 -2.7 A -27 2.0 W 1.3 W/°C ± 114 5.0 V/ns °C Max. ...

Page 2

... IRF7342 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... TOP BOTTOM 10 1 ° 0.1 0.1 100 Fig 2. Typical Output Characteristics 100 10 ° 150 -25V 0.1 0 Fig 4. Typical Source-Drain Diode IRF7342 VGS -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V -3.0V -3.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 150 C ° ...

Page 4

... IRF7342 2.0 -3 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 5. Normalized On-Resistance Vs. Temperature -3 ate-to-S ource V oltage ( Fig 7. Typical On-Resistance Vs. Gate Voltage 4 0.240 0.200 0.160 0.120 V = -10V GS 0.080 0 80 100 120 140 160 ° Fig 6. Typical On-Resistance Vs. Drain 300 250 200 ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com SHORTED 100 0 Fig 10. Typical Gate Charge Vs. 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7342 -3. -48V -30V -12V Total Gate Charge (nC) G Gate-to-Source Voltage Notes: 1. Duty factor Peak ...

Page 6

... IRF7342 SO-8 Package Details 0 .25 (. SIO 4.5 M -198 TRO L LIN SIO SIO ILLIM ( S TLIN JED TLINE SIO EXCE (.00 6 STRA TE.. 6 Part Marking ° 0 .10 (. LIM .0532 .0688 1 . .0040 .0098 0 .10 0 .25 B .014 .018 0 . 075 .0 098 0 .19 0.25 D ...

Page 7

... IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ www.irf.com 0 CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7342 . . 2/99 7 ...

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