IRF7353D2 International Rectifier, IRF7353D2 Datasheet

MOSFET N-CH 30V 6.5A 8-SOIC

IRF7353D2

Manufacturer Part Number
IRF7353D2
Description
MOSFET N-CH 30V 6.5A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7353D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
29 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7353D2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7353D2PBF
Quantity:
10 420
Description
The FETKY™ family of Co-Pack HEXFET
diodes offers the designer an innovative, board space saving solution for
switching regulator and power management applications. Generation 5
HEXFET power MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combinining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Absolute Maximum Ratings (T
Thermal Resistance Ratings
Notes:

ƒ
www.irf.com
Parameter
R
Parameter
I
I
I
P
P
V
dv/dt
T
D
D
DM
θJA
D
D
GS
J,
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Starting T
I
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec
Co-Pack HEXFET
Schottky Diode
Ideal For Buck Regulator Applications
N-Channel HEXFET power MOSFET
Low V
Generation 5 Technology
SO-8 Footprint
@ T
@ T
SD
T
@T
@T
STG
≤ 4.0A, di/dt ≤ 74A/µs, V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
F
J
Schottky Rectifier
= 25°C, L = 10mH, R
®
Power MOSFET and
DD
Continuous Drain Current „
Pulsed Drain Current 
Power Dissipation „
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Junction-to-Ambient …
≤ V
G
(BR)DSS
= 25Ω, I
A
, T
®
= 25°C unless otherwise noted)
AS
J
Power MOSFETs and Schottky
≤ 150°C
= 4.0A
G
A
S
A
FETKY
1
2
3
4
Top View
ä
MOSFET / Schottky Diode
8
6
5
7
-55 to +150
Maximum
IRF7353D2
K
± 20
K
D
D
Maximum
-5.0
6.5
5.2
2.0
1.3
52
16
62.5
Schottky V
R
DS(on)
V
DSS
PD- 93809A
SO-8
= 0.029Ω
= 30V
F
= 0.52V
Units
mW/°C
°C/W
Units
10/20/04
V/ns
°C
W
A
V
1

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IRF7353D2 Summary of contents

Page 1

... Surface mounted on FR-4 board, t ≤ 10sec www.irf.com FETKY Top View ® Power MOSFETs and Schottky = 25°C unless otherwise noted 25Ω 4.0A AS ≤ 150° PD- 93809A IRF7353D2 ä MOSFET / Schottky Diode 30V DSS 0.029Ω DS(on Schottky V = 0.52V F SO-8 Maximum Units 6 ...

Page 2

... IRF7353D2 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... TOP BOTTOM 3. 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 10V 0.0 A -60 -40 -20 4.5 5.0 Fig 4. Normalized On-Resistance IRF7353D2 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( 10V GS 0 ...

Page 4

... IRF7353D2 0.040 V = 4.5V GS 0.036 0.032 0.028 0.024 V GS 0.020 Drain Current (A) D Fig 5. Typical On-Resistance Vs. Drain Current 1200 1MHz iss rss oss ds gd 900 C iss C oss 600 C 300 rss Drain-to-Source Voltage (V) DS Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage 4 Power MOSFET Characteristics ...

Page 5

... Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 10 1 www.irf.com 0.01 0 Rectangular Pulse Duration (sec 150° 25°C J 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) SD Fig 10. Typical Source-Drain Diode Forward Voltage IRF7353D2 Notes: 1. Duty factor Peak thJA 1.4 1.6 ...

Page 6

... IRF7353D2 Schottky Diode Characteristics 100 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - V Fig Typical Forward Voltage Drop Characteristics 6 100 10 1 0.1 0. 150°C J 0.001 T = 125° 25°C J Reverse Current Vs. Reverse 160 140 120 100 80 60 0.8 1 ...

Page 7

... SO-8 (Fetky) Part Marking Information EXAM PLE: THIS IRF7807D1 (FETKY) INTERNA TIO NA L www.irf.com B H 0.25 [.010 0.10 [.004] 3X 1.27 [.050] XXXX 807D1 RECTIFIER IRF7353D2 INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b ...

Page 8

... IRF7353D2 SO-8 (Fetky) Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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