IRF737LC Vishay, IRF737LC Datasheet

MOSFET

IRF737LC

Manufacturer Part Number
IRF737LC
Description
MOSFET
Manufacturer
Vishay
Datasheet

Specifications of IRF737LC

Transistor Polarity
N Channel
Continuous Drain Current Id
6.1A
Power Dissipation Pd
74W
Peak Reflow Compatible (260 C)
No
Drain Source On Resistance @ 10v
750mohm
Thermal Resistance
1.7°C/W
Current Rating
6.1A
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 3.7A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
6.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
430pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF737LC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF737LC
Manufacturer:
IR
Quantity:
35 965
Part Number:
IRF737LC
Manufacturer:
IR
Quantity:
12 500
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 6.1 A, dI/dt ≤ 270 A/µs, V
TO-220
= 25 V, starting T
(Ω)
G
a
D
a
S
J
= 25 °C, L = 5.7 mH, R
c
a
b
DD
V
GS
≤ V
= 10 V
G
DS
, T
N-Channel MOSFET
Single
J
300
≤ 150 °C.
4.8
7.6
17
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.75
GS
AS
6-32 or M3 screw
at 10 V
= 6.1 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220
IRF737LCPbF
SiHF737LC-E3
IRF737LC
SiHF737LC
= 100 °C
= 25 °C
FEATURES
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge Power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristics of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
SYMBOL
T
dV/dt
J
iss
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
, C
stg
IRF737LC, SiHF737LC
oss
GS
, C
Rating
rss
- 55 to + 150
LIMIT
300
± 30
0.59
300
120
6.1
3.9
6.1
7.4
3.4
1.1
24
74
10
Vishay Siliconix
d
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
1

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IRF737LC Summary of contents

Page 1

... TO-220 IRF737LCPbF SiHF737LC-E3 IRF737LC SiHF737LC = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 6.1 A (see fig. 12 ≤ 150 ° IRF737LC, SiHF737LC Vishay Siliconix Rating iss oss rss SYMBOL LIMIT V 300 DS V ± 6 3 0.59 E 120 ...

Page 2

... IRF737LC, SiHF737LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... V Drain-to-Source Voltage ( 91050_02 Fig Typical Output Characteristics, T Document Number: 91050 S-82998-Rev. A, 12-Jan-09 4 ° 91050_03 = 25 ° µs Pulse Width T = 150 ° 91050_04 = 150 °C C IRF737LC, SiHF737LC Vishay Siliconix ° 150 ° 0.1 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF737LC, SiHF737LC Vishay Siliconix 800 MHz 700 iss rss 600 oss ds 500 C 400 300 C 200 100 Drain-to-Source Voltage ( 91050_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 150 Total Gate Charge (nC) 91050_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 2 10 91050_07 Fig ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91050 S-82998-Rev. A, 12-Jan-09 Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms IRF737LC, SiHF737LC Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r d(off) ...

Page 6

... IRF737LC, SiHF737LC Vishay Siliconix 91050_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 240 Top 200 Bottom 160 120 125 100 Starting T , Junction Temperature (° 2.7 A 3.9 A 6.1 A 150 Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF737LC, SiHF737LC Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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