IRF740S Vishay, IRF740S Datasheet

MOSFET N-CH 400V 10A D2PAK

IRF740S

Manufacturer Part Number
IRF740S
Description
MOSFET N-CH 400V 10A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF740S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF740S

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Company
Part Number
Manufacturer
Quantity
Price
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IRF740S
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Part Number:
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IRF740STRLPBF
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Part Number:
IRF740STRLPBF
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Part Number:
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Part Number:
IRF740STRRPBF
Manufacturer:
IR
Quantity:
20 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91055
S-83029-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 10A, dI/dt ≤ 120 A/µs, V
G D
= 50 V, starting T
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 9.1 mH, R
c
D
IRF740SPbF
SiHF740S-E3
IRF740S
SiHF740S
a
2
DD
PAK (TO-263)
b
V
≤ V
GS
e
= 10 V
DS
G
, T
J
N-Channel MOSFET
e
Single
≤ 150 °C.
400
9.0
63
32
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.55
GS
AS
at 10 V
= 10 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
= 25 °C
D
IRF740STRLPbF
SiHF740STL-E3
IRF740STRL
SiHF740STL
2
T
PAK (TO-263)
T
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
2
PAK (TO-263) is suitable for high current applications
a
a
2
PAK (TO-263) is a surface mount power package
a
a
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF740S, SiHF740S
design,
D
IRF740STRRPbF
SiHF740STR-E3
-
-
- 55 to + 150
2
PAK (TO-263)
LIMIT
0.025
300
± 20
400
520
125
6.3
1.0
3.1
4.0
10
40
10
13
low
Vishay Siliconix
d
on-resistance
a
a
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF740S Summary of contents

Page 1

... PAK (TO-263) IRF740STRLPbF a SiHF740STL-E3 a IRF740STRL a SiHF740STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω (see fig. 12 ≤ 150 °C. J IRF740S, SiHF740S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF740STRRPbF a SiHF740STR- SYMBOL LIMIT V 400 DS V ± 6 1.0 0.025 ...

Page 2

... IRF740S, SiHF740S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Drain-to-Source Voltage ( 91055_02 Fig Typical Output Characteristics, T Document Number: 91055 S-83029-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91055_03 = 25 ° µs Pulse Width T = 150 ° 91055_04 = 150 °C C IRF740S, SiHF740S Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF740S, SiHF740S Vishay Siliconix 2500 MHz iss 2000 rss oss ds 1500 C 1000 C 500 Drain-to-Source Voltage ( 91055_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 320 200 Total Gate Charge (nC) 91055_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 91055_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91055 S-83029-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (S) 1 IRF740S, SiHF740S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF740S, SiHF740S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91055_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 1200 Top ...

Page 7

... Driver same type as D.U.T. • I controlled by duty factor "D" SD • D.U.T. - device under test P.W. Period D = Period waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel IRF740S, SiHF740S Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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