IRF7460 International Rectifier, IRF7460 Datasheet

MOSFET N-CH 20V 12A 8-SOIC

IRF7460

Manufacturer Part Number
IRF7460
Description
MOSFET N-CH 20V 12A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7460

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
2050pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7460

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7460
Manufacturer:
Internationa
Quantity:
373
Part Number:
IRF7460TRPBF
Manufacturer:
IOR-PBF
Quantity:
3 582
Part Number:
IRF7460TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7460TRPBF
Quantity:
10 420
Absolute Maximum Ratings
Benefits
l
l
l
Thermal Resistance
l
l
www.irf.com
Applications
Notes  through
Symbol
V
V
I
I
I
P
P
T
Symbol
R
R
D
D
DM
DS
GS
D
D
J
@ T
@ T
and Current
, T
JL
JA
Converters with Synchronous Rectification
for Telecom and Industrial Use
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
@T
@T
High Frequency Isolated DC-DC
High Frequency Buck Converters for
Computer Processor Power
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
are on page 8
Parameter
Parameter

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
G
S
S
S
V
20V
DSS
1
2
3
4
T o p V ie w
Typ.
–––
–––
HEXFET
R
8
6
5
7
DS(on)
10@V
-55 to + 150
D
D
D
D
A
A
Max.
± 20
100
0.02
2.5
1.6
20
12
10
GS
max(m
®
= 10V
Power MOSFET
Max.
20
50
IRF7460
SO-8
PD - 93886D
12A
mW/°C
Units
Units
°C/W
I
D
W
W
°C
V
A
V
1
3/25/01

Related parts for IRF7460

IRF7460 Summary of contents

Page 1

... Junction-to-Ambient JA Notes  through … are on page 8 www.irf.com SMPS MOSFET V DSS 20V 10V GS @ 10V GS  ƒ ƒ Typ. ––– … ––– 93886D IRF7460 ® HEXFET Power MOSFET R max(m I DS(on) D 10@V = 10V 12A SO-8 Max. Units 20 V ± ...

Page 2

... IRF7460 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP BOTTOM 100 10 ° 1 0.1 100 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 15V 0.0 4.0 4.5 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7460 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V 2.7V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 12A ...

Page 4

... IRF7460 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 0.1 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage MHZ SHORTED 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 100 125 150 ° 10 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7460 D.U. 4.5V Pulse Width µs Duty Factor d(on) ...

Page 6

... IRF7460 0.04 0.03 0. 4.5V 0. 10V 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 20V Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 0 ...

Page 7

... SO-8 Package Details (. (. ( (. SO-8 Part Marking www.irf.com ° (. IRF7460 ILLIM .05 32 .06 88 1 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3. .635 .22 84 .244 0 5.8 0 6.20 K .01 1 ...

Page 8

... IRF7460 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO DIM E NS ION S ARE SHO ILL IM E TER S (INC & ING SIO ILLIME TER . TLIN IA-48 1 & -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ ...

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