IRF7473 International Rectifier, IRF7473 Datasheet

MOSFET N-CH 100V 6.9A 8-SOIC

IRF7473

Manufacturer Part Number
IRF7473
Description
MOSFET N-CH 100V 6.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7473

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
6.9A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
61nC @ 10V
Input Capacitance (ciss) @ Vds
3180pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7473

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7473
Manufacturer:
ST
0
Part Number:
IRF7473TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7473TRPBF
Manufacturer:
International Rectifier
Quantity:
27 091
Part Number:
IRF7473TRPBF
Manufacturer:
IR
Quantity:
3 800
Part Number:
IRF7473TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7473TRPBF
Quantity:
6 000
l
l
l
Typical SMPS Topologies
l
l
l
l
l
l
l
Thermal Resistance
Benefits
Absolute Maximum Ratings
Applications
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
www.irf.com
Notes  through † are on page 8
D
D
DM
STG
D
GS
J
θJL
θJA
@ T
@ T
and Current
Full and Half Bridge 48V input Circuit
Forward 24V input Circuit
Telecom and Data-Com 24 and 48V
Motor Control
Uninterrutible Power Supply
Ultra Low On-Resistance
High Speed Switching
Low Gate Drive Current Due to Improved
Improved Avalanche Ruggedness and
Fully Characterized Avalanche Voltage
@T
input DC-DC converters
Gate Charge Characteristic
Dynamic dv/dt
A
A
A
= 25°C
= 70°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
S
S
S
V
100V
DSS
1
2
3
4
Top View
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
26
-55 to + 150
8
7
6
5
mW
R
Max.
0.02
± 20
DS(on)
6.9
5.5
2.5
5.8
55
D
D
D
D
A
A
@V
®
GS
max
Power MOSFET
Max.
= 10V
20
50
IRF7473
SO-8
6.9A
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
A
V
1
6/29/04

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IRF7473 Summary of contents

Page 1

... Junction-to-Drain Lead θJL R Junction-to-Ambient θJA Notes  through † are on page 8 www.irf.com V DSS 100V Top View @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– „ ––– IRF7473 ® HEXFET Power MOSFET R max I DS(on 10V 6. SO-8 Max. Units 6 ...

Page 2

... IRF7473 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP 100 BOTTOM 10 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 = 25V 0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7473 VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 10V ...

Page 4

... IRF7473 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.0 0.4 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage MHZ SHORTED 100 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7473 + - ≤ 1 ≤ 0 d(off thJA A ...

Page 6

... IRF7473 0.028 0.026 10V 0.024 0.022 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 15a&b. Unclamped Inductive Test circuit ...

Page 7

... DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 6 SO-8 Part Marking www.irf.com θ 45° θ 0.10 (.004 IRF7473 INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B ...

Page 8

... IRF7473 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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