IRF7521D1 International Rectifier, IRF7521D1 Datasheet

MOSFET N-CH 20V 2.4A MICRO-8

IRF7521D1

Manufacturer Part Number
IRF7521D1
Description
MOSFET N-CH 20V 2.4A MICRO-8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7521D1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
135 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7521D1
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7521D1TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7521D1TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
The FETKY
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
provides the smallest footprint available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8
application environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (T
Thermal Resistance Ratings
Notes:
www.irf.com
Parameter
R
Parameter
I
I
I
P
P
V
dv/dt
T
D
D
DM
D
D
GS
J,
JA
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
I
Pulse width
Surface mounted on FR-4 board, t
Co-packaged HEXFET
and Schottky Diode
N-Channel HEXFET
Low V
Generation 5 Technology
Micro8
@ T
@ T
SD
T
@T
@T
STG
A
A
A
A
1.7A, di/dt
= 25°C
= 70°C
= 25°C
= 70°C
F
TM
TM
Schottky Rectifier
Footprint
family of co-packaged HEXFETs and Schottky diodes offer the
300µs; duty cycle
TM
66A/µs, V
package, with half the footprint area of the standard SO-8,
DD
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Junction-to-Ambient
®
V
Power MOSFET
(BR)DSS
2%
10sec.
TM
A
, T
will allow it to fit easily into extremely thin
= 25°C unless otherwise noted)
J
PRELIMINARY
150°C
GS
G
A
S
A
@ 4.5V
FETKY MOSFET / Schottky Diode
1
2
3
4
T op V ie w
8
6
5
7
-55 to +150
Maximum
IRF7521D1
Maximum
± 12
K
K
D
D
2.4
1.9
1.3
0.8
5.0
19
10
TM
100
Schottky Vf = 0.39V
R
DS(on)
V
DSS
Micro8
= 0.135
= 20V
TM
Units
mW/°C
°C/W
Units
V/ns
PD-91646C
°C
W
A
V
1
01/29/99

Related parts for IRF7521D1

IRF7521D1 Summary of contents

Page 1

... Surface mounted on FR-4 board, t www.irf.com PRELIMINARY FETKY MOSFET / Schottky Diode Power MOSFET will allow it to fit easily into extremely thin = 25°C unless otherwise noted 4. 150°C (BR)DSS J 2% 10sec. PD-91646C IRF7521D1 20V DSS 0.135 DS(on Schottky Vf = 0.39V TM Micro8 TM Maximum Units 2.4 A 1.9 19 1.3 W ...

Page 2

... IRF7521D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... Power Mosfet Characteristics 0.1 1 .5V 20 µ 5° 0. 2.0 1.5 1.0 0 µ 0.0 A 3.0 3.5 4.0 IRF7521D1 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1. .5V 2 0µ 0° rain-to-S ource V oltage ( Fig 2. Typical Output Characteristics -60 -40 -20 ...

Page 4

... IRF7521D1 iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ° 0.1 0.4 0.6 0.8 1.0 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics . Fig 6. Typical Gate Charge Vs ing lse 0.1 1.4 1 ...

Page 5

... rain C urrent (A) D Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com Power Mosfet Characteristics 0.001 0.01 0 Rectangular Pulse Duration (sec 5. 4. 0.0 5.0 6.0 7.0 Fig 11. Typical On-Resistance Vs. Gate IRF7521D1 Notes: 1. Duty factor Peak thJC 1.7A D 2.0 4.0 6 Gate-to-Source Voltage ( Voltage ...

Page 6

... IRF7521D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 0.6 Forwa lta Forward Votage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics ° ° ° 0.8 1 era ge Forw ard C urrent - I Fig.14 - Maximum Allowable Ambient J R Fig Typical Values of Reverse Current Vs. Reverse Voltage V = 20V ...

Page 7

... 0.0 8 (.0 03 DIME N S ION . DIME N S ION : INC DIME N S ION INC Part Marking www.irf.com SSIGN UAL 0.10 (.004 IRF7521D1 INC ILLIME MIN .044 0 .91 1. .008 0 .10 0. .014 0 .25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 B ASIC ...

Page 8

... IRF7521D1 TM Micro8 Tape & Reel & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 221 8371 IR TAIWAN:16 Fl ...

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