IRF7526D1 International Rectifier, IRF7526D1 Datasheet

MOSFET P-CH 30V 2A MICRO8

IRF7526D1

Manufacturer Part Number
IRF7526D1
Description
MOSFET P-CH 30V 2A MICRO8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7526D1

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
200 mOhm @ 1.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
180pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7526D1TRPBF
Manufacturer:
IR
Quantity:
20 000
The FETKY
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance Ratings
Notes:
Description
www.irf.com
Parameter
R
I
I
I
P
P
V
dv/dt
T
D
D
DM
D
D
GS
J,
JA
Pulse width
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
Co-packaged HEXFET Power
MOSFET and Schottky Diode
P-Channel HEXFET
Generation 5 Technology
Micro8
@ T
@ T
SD
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
Low V
T
@T
@T
STG
A
A
A
A
-1.2A, di/dt
= 25°C
= 70°C
= 25°C
= 70°C
TM
F
TM
Schottky Rectifier
Footprint
TM
family of co-packaged HEXFETs and Schottky diodes offer the
300µs – duty cycle
package, with half the footprint area of the standard SO-8, provides
160A/µs, V
Parameter
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
TM
Junction-to-Ambient
DD
will allow it to fit easily into extremely thin application
V
2%
(BR)DSS
, T
J
150°C
GS
G
A
S
A
@ -4.5V
FETKY
1
2
3
4
T op V ie w
TM
TM
MOSFET & Schottky Diode
an ideal
8
7
6
5
-55 to +150
Maximum
IRF7526D1
Maximum
1.25
± 20
-2.0
-1.6
-5.0
K
-16
K
D
D
0.8
10
100
Schottky Vf = 0.39V
R
DS(on)
V
DSS
Micro8
PD -91649C
= -30V
= 0.20
TM
Units
mW/°C
°C/W
Units
V/ns
W
°C
A
V
1
5/7/99

Related parts for IRF7526D1

IRF7526D1 Summary of contents

Page 1

... Pulse width 300µs – duty cycle When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com FETKY -4. 150°C (BR)DSS -91649C IRF7526D1 MOSFET & Schottky Diode -30V DSS 0. DS(on Schottky Vf = 0.39V TM Micro8 TM an ideal Maximum Units -2 ...

Page 2

... IRF7526D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... Power Mosfet Characteristics 1 0 TOP BOTTOM - 3. 0 0.1 Fig 2. Typical Output Characteristics 2 .2A D 1.5 1.0 0 0.0 A -60 -40 6.0 6.5 7.0 Fig 4. Normalized On-Resistance IRF7526D1 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V -3 0µ 0° rain-to-S ource V oltage ( - - unc tion T em perature (° ...

Page 4

... IRF7526D1 iss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° °C J 0.1 0.4 0.6 0.8 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics Fig 6. Typical Gate Charge Vs ing lse 0.1 1.2 1.4 1 Fig 8. Maximum Safe Operating Area ...

Page 5

... Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1.5 1 -4. rain C urrent ( Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com Power Mosfet Characteristics 0.01 0 Rectangular Pulse Duration (sec Fig 11. Typical On-Resistance Vs. Gate IRF7526D1 Notes: 1. Duty factor Peak thJC -2. ate-to-S ourc e V oltage ( Voltage 100 A ...

Page 6

... IRF7526D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 F orwa rd V oltage Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics 0.1 0.01 0.001 0.0001 50° 25° 5° 0.6 0.8 1 (V) F Fig.14 - Maximum Allowable Ambient ° ° 0°C 7 5° ° °C ...

Page 7

... 0.0 8 (.0 03 DIME N S ION . DIME N S ION : INC DIME N S ION INC Part Marking www.irf.com SSIGN UAL 0.10 (.004 IRF7526D1 INC ILLIME MIN .044 0 .91 1. .008 0 .10 0. .014 0 .25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 B ASIC ...

Page 8

... IRF7526D1 TM Micro8 Tape & Reel & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 221 8371 IR TAIWAN:16 Fl ...

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