IRF7606 International Rectifier, IRF7606 Datasheet

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IRF7606

Manufacturer Part Number
IRF7606
Description
Power MOSFET(Vdss=-30V/ Rds(on)=0.09ohm)
Manufacturer
International Rectifier
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance Ratings
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
I
I
I
P
V
dv/dt
T
D
D
DM
R
J,
D
GS
@ T
@ T
T
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
@T
JA
STG
A
A
A
= 25°C
= 70°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Parameter
GS
GS
@ -10V
@ -10V
G
S
S
S
1
2
3
4
T o p View
Typ.
–––
8
7
6
5
HEXFET
-55 to + 150
D
D
D
D
A
Max.
-3.6
-2.9
-5.0
± 20
-19
1.8
14
MICRO8
®
R
IRF7606
Max.
Power MOSFET
DS(on)
V
70
DSS
PD - 9.1264C
= -30V
= 0.09
Units
mW/°C
Units
V/ns
°C/W
W
°C
A
V
8/25/97

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IRF7606 Summary of contents

Page 1

... All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . View Parameter @ -10V GS @ -10V 9.1264C IRF7606 ® HEXFET Power MOSFET -30V DSS 0.09 ...

Page 2

... IRF7606 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... G S Fig 3. Typical Transfer Characteristics Fig 2. Typical Output Characteristics ° 5.0 5.5 6.0 IRF7606 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT OM - 3.0V 20 µ LSE W IDTH 0° rain-to-S ource V oltage (V ) ...

Page 4

... IRF7606 1000 1MH 800 600 400 200 Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0° ° ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7606 D.U. -10V Pulse Width µs Duty Factor t t d(on ...

Page 6

... IRF7606 D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled controlled by Duty Factor "D" ...

Page 7

... YEA IRF7606 ...

Page 8

... IRF7606 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches TLIN & - NTRO LLING DIM LIM E TER . LIM ...

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