IRF7726 International Rectifier, IRF7726 Datasheet

MOSFET P-CH 30V 7A MICRO8

IRF7726

Manufacturer Part Number
IRF7726
Description
MOSFET P-CH 30V 7A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7726

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
2204pF @ 25V
Power - Max
1.79W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7726

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7726
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7726TRPBF
Manufacturer:
IR
Quantity:
20 000
Thermal Resistance
l
l
l
l
l
Absolute Maximum Ratings
Description
www.irf.com
HEXFET
fier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management.
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
V
I
I
I
P
P
V
T
R
D
D
DM
J
DS
D
D
GS
@ T
@ T
JA
, T
P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
Power MOSFETs from International Recti-
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
Parameter
Parameter

GS
GS
ƒ
ƒ
ƒ
@ -10V
@ -10V
G
S
S
S
V
-30V
DSS
1
2
3
4
T op V ie w
HEXFET
0.040@V
0.026@V
8
7
6
5
R
-55 to +150
Max.
DS(on)
70
D
D
D
D
Max.
A
1.79
1.14
0.01
-7.0
-5.7
-30
-28
±20
®
GS
GS
IRF7726
Power MOSFET
max
= -4.5V
= -10V
MICRO-8
PD -94064
-
-
7.0A
6.0A
Units
Units
I
W/°C
°C/W
D
°C
W
W
V
A
V
1
12/21/00

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IRF7726 Summary of contents

Page 1

... Gate-to-Source Voltage Junction and Storage Temperature Range J STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET V DSS -30V -10V GS @ -10V GS  ƒ ƒ ƒ PD -94064 IRF7726 ® Power MOSFET R max I DS(on) D 0.026@V = -10V 7. 0.040@V = -4.5V 6. MICRO-8 Max. Units -30 V -7.0 -5.7 A -28 1 ...

Page 2

... IRF7726 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM -2.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V DS 0.0 5.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7726 VGS TOP -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V -2.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) -7. ...

Page 4

... IRF7726  3200 1MHz iss 2800 rss oss 2400 C iss 2000 1600 1200 800  C oss 400  C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100  ° 150 0.1 0.0 1.5 3.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0 Rectangular Pulse Duration (sec) 1 IRF7726 D.U. µ d(off thJA A ...

Page 6

... IRF7726 0.070 0.060 0.050 0.040 -7.0A 0.030 0.020 0.010 2.0 3.0 4.0 5.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.120 0.080 0.040 0.000 7.0 8.0 9.0 10.0 0 Fig 13. Typical On-Resistance Vs. ...

Page 7

... Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 150 120 -250µ 100 125 150 0.001 Fig 16. Typical Power Vs. Time IRF7726 0.010 0.100 1.000 10.000 100.000 Time (sec) 7 ...

Page 8

... IRF7726 Package Outline Micro-8 Outline Dimensions are shown in millimeters (inches (. (. .5M -1 982 . Part Marking Information Micro PLE : 7501 (. ° 6 ° 0 ° 6 ° . ( YEA www.irf.com ...

Page 9

... This product has been designed and qualified for the commercial market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.12/00 IRF7726 TAC Fax: (310) 252-7903 9 ...

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