IRF7807VD2 International Rectifier, IRF7807VD2 Datasheet

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807VD2

Manufacturer Part Number
IRF7807VD2
Description
MOSFET N-CH 30V 8.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7807VD2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
25 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7807VD2
Description
The FETKY
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Thermal Resistance
• Co-Pack N-channel HEXFET Power MOSFET
• Ideal for Synchronous Rectifiers in DC-DC
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
Absolute Maximum Ratings
www.irf.com
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain CurrentQ
Power DissipationS
Schottky and Body Diode
Average ForwardCurrentT
Junction & Storage Temperature Range
and Schottky Diode
Converters Up to 5A Output
GS
family of Co-Pack HEXFET MOSFETs and
4.5V)
25°C
70°C
25°C
70°C
70°C
25°C
Symbol
T
I
F
J
R
R
V
V
, T
I
P
(AV)
I
DM
DS
GS
D
JA
D
JL
STG
FETKY™ MOSFET / SCHOTTKY DIODE
SO-8
DEVICE CHARACTERISTICSU
R
Q
Q
Q
DS
G
sw
oss
–55 to 150
(on)
Max.
Max.
±20
8.3
6.6
2.5
1.6
3.7
2.3
50
20
30
66
IRF7807VD2
IRF7807VD2
17m
9.5nC
3.4nC
A/S
A/S
A/S
12nC
G
1
2
3
4
Top View
PD-94079
Units
Units
°C/W
°C/W
°C
A
W
8
6
5
V
7
A
K/D
K/D
K/D
K/D
D
1
03/05/01

Related parts for IRF7807VD2

IRF7807VD2 Summary of contents

Page 1

... DM 25° 70°C 25°C I (AV) F 70° STG PD-94079 IRF7807VD2 1 8 A/S K A/S K A/S K K/D D Top View IRF7807VD2 17m DS (on) 9.5nC G 3.4nC sw 12nC oss Max. Units 30 V ±20 8.3 6 2.5 W 1.6 3.7 A 2.3 –55 to 150 °C Max. Units 50 °C/W 20 °C/W 1 03/05/01 ...

Page 2

... IRF7807VD2 Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Current* Gate-Source Leakage I GSS Current* Total Gate Charge Pre-Vth Q GS1 Gate-Source Charge Post-Vth Q GS2 Gate-Source Charge Gate to Drain Charge Q GD ...

Page 3

... Synchronous FET Q The power loss equation for Q2 is approximated gs2 by loss conduction P I loss rms Q gs2 Q , can be seen from *dissipated primarily in Q1 critical fac- gs2 is formed by the when multiplied by IRF7807VD2 4 Drain Current 1 Gate Voltage Drain Voltage * P P drive output 2 R ds(on oss ...

Page 4

... IRF7807VD2 For the synchronous MOSFET Q2, R portant characteristic; however, once again the im- portance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the con- trol IC so the gate drive losses become much more significant ...

Page 5

... Fig 7. On-Resistance Vs. Gate Voltage 70 TOP 60 50 BOTTOM 0. 0 0.6 0.8 1 Fig 8. Typical Reverse Output Characteristics IRF7807VD2 7.0A 4.0 6.0 8.0 10.0 12.0 14.0 V GS, Gate -to -Source Voltage (V) VGS 4.5V 3.5V 3.0V 2.5V 2.0V O.OV 380µS PULSE WIDTH Tj = 150°C ...

Page 6

... IRF7807VD2 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.001 0. Rectangular Pulse Duration (sec 7. 16V Total Gate Charge (nC) G Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage  Notes: 1. Duty factor ...

Page 7

... Forward Voltage Drop - Fig Typical Forward Voltage Drop Characteristics www.irf.com 100 10 1 0.1 0.01 0.001 0 Reverse Current Vs. Reverse Voltage 0.8 1.0 1.2 IRF7807VD2 Tj = 150°C 125°C 100°C 75°C 50°C 25° Reverse Voltage - V R (V) Fig Typical Values ...

Page 8

... IRF7807VD2 SO-8 Package Details 0 .25 (. SIO 4.5 M -198 LIN SIO SIO ILLIM ( S LIN JED LINE SIO EXCE (.00 6 E.. 6 SO-8 Part Marking ° 0 .10 (. LIM .0532 .0688 1 . .0040 .0098 0 .10 0 .25 B .014 .018 0 . 075 .0 098 0 .19 0. .80 4.98 E ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRE . Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/01 IRF7807VD2 4 2 TAC Fax: (310) 252-7903 9 ...

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