IRF7831 International Rectifier, IRF7831 Datasheet
IRF7831
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IRF7831 Summary of contents
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... V DSS 30V 3. Top View @ 10V GS @ 10V Typ. ––– f ––– IRF7831 HEXFET Power MOSFET R max Qg (typ.) DS(on) = 10V 40nC SO-8 Max. Units 30 V ± ...
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Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...
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PULSE WIDTH 2.25V Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 150°C 10.0 1 25° ...
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0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss Coss 1000 Crss 100 ...
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Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 1 0.02 0.01 0.1 0.01 SINGLE PULSE ...
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D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V ...
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D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 15. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse „ Recovery - + Current D.U.T. V ...
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Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ...
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SO-8 Package Details 0.25 [.010 NOT DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ...
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SO-8 Tape and Reel NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: ...