IRF7842 International Rectifier, IRF7842 Datasheet

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IRF7842

Manufacturer Part Number
IRF7842
Description
Power MOSFET(Vdss = 40 V)
Manufacturer
International Rectifier
Datasheet

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Applications
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Benefits
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Notes  through
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJL
θJA
for Isolated DC-DC Converters
and Current
@ T
@ T
DC-DC Converters
Synchronous MOSFET for Notebook
Processor Power
Secondary Synchronous Rectification
Synchronous Fet for Non-Isolated
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
are on page 9
at 4.5V V
Parameter
Parameter
f
f
GS
fg
c
g
GS
GS
@ 10V
@ 10V
G
S
S
S
V
40V 5.0m:@V
DSS
1
2
3
4
Top View
Typ.
–––
–––
R
-55 to + 150
HEXFET
8
7
6
5
DS(on)
Max.
0.02
± 20
140
2.5
1.6
40
18
14
D
D
D
D
A
A
GS
max
Max.
®
= 10V
20
50
IRF7842
Power MOSFET
SO-8
Qg (typ.)
33nC
Units
Units
W/°C
°C/W
°C
W
V
A
1
4/26/04

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IRF7842 Summary of contents

Page 1

... V DSS 40V 5.0m:@ Top View @ 10V GS @ 10V Typ. g ––– fg ––– IRF7842 ® HEXFET Power MOSFET R max Qg (typ.) DS(on) = 10V 33nC SO-8 Max. Units 40 V ± ...

Page 2

... IRF7842 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... BOTTOM 2. 100 0.1 Fig 2. Typical Output Characteristics 2 18A 10V 1.5 1.0 0.5 3.5 4.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7842 VGS TOP 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V BOTTOM 2.5V 2.5V ≤ 60µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 100 120 140 160 Junction Temperature (°C) Vs ...

Page 4

... IRF7842 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.0 100 150°C 10 25°C 1.0 0.1 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 7 ...

Page 5

... τ J τ J τ τ 1 τ 2 τ Ci= τi/Ri Ci τi/Ri 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7842 250µ 100 125 150 Temperature ( °C ) τi (sec (°C/ τ 10.48 0.138167 C τ τ 26.83 1.8582 3 τ ...

Page 6

... IRF7842 2.0 4.0 6 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage D.U 20V GS 0.01 Ω Fig 13a. Unclamped Inductive Test Circuit Fig 13b. Unclamped Inductive Waveforms 6 200 18A 160 120 125° 25°C ...

Page 7

... D.U.T. V Waveform DS Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs Vds + Vgs(th Qgs1 Qgs2 Fig 17. Gate Charge Waveform IRF7842 P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ for N-Channel Vgs ...

Page 8

... IRF7842 SO-8 Package Details 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.4/04 IRF7842 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) TAC Fax: (310) 252-7903 ...

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