IRF840LC Vishay, IRF840LC Datasheet
IRF840LC
Specifications of IRF840LC
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IRF840LC Summary of contents
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... TO-220 IRF840LCPbF SiHF840LC-E3 IRF840LC SiHF840LC = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 8.0 A (see fig. 12 ≤ 150 ° IRF840LC, SiHF840LC Vishay Siliconix Rating iss oss rss SYMBOL LIMIT V 500 DS V ± 8 5 1.0 E 510 ...
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... IRF840LC, SiHF840LC Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Fig Typical Output Characteristics, T Document Number: 91067 S-83030-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91067_03 = 25 ° µs Pulse Width T = 150 ° 91067_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF840LC, SiHF840LC Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig ...
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... IRF840LC, SiHF840LC Vishay Siliconix 2400 MHz iss gs 2000 rss oss ds 1600 C iss 1200 C 800 oss 400 C rss Drain-to-Source Voltage ( 91067_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 250 100 Total Gate Charge (nC) 91067_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted 91067_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91067 S-83030-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF840LC, SiHF840LC Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF840LC, SiHF840LC Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1200 1000 800 600 400 200 100 50 Starting T , Junction Temperature (°C) 91067_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D Top 3.6 A 5.1 A Bottom 8.0 A 125 150 Current regulator Same type as D.U.T. 50 kΩ ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF840LC, SiHF840LC Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...