IRF9410 International Rectifier, IRF9410 Datasheet

MOSFET N-CH 30V 7A 8-SOIC

IRF9410

Manufacturer Part Number
IRF9410
Description
MOSFET N-CH 30V 7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF9410

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Continuous Drain (id) @ 25° C
-
Other names
*IRF9410

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IR
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20 000
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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( T
Thermal Resistance Ratings
Maximum Power Dissipation
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
Parameter
A
= 25°C Unless Otherwise Noted)
T
T
T
T
A
A
A
A
PRELIMINARY
= 25°C
= 70°C
= 25°C
= 70°C
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
G
S
S
S
Symbol
T
J,
dv/dt
V
V
E
E
I
I
DM
I
AR
1
2
3
4
T
GS
DS
AS
AR
S
T o p V ie w
STG
Symbol
R
HEXFET
JA
8
7
6
5
-55 to + 150
Maximum
D
D
D
D
A
S O -8
A
± 20
0.25
2.8
2.5
1.6
4.2
5.0
30
7.0
5.8
37
70
®
R
IRF9410
Limit
Power MOSFET
DS(on)
50
V
DSS
PD - 9.1562A
= 0.030
= 30V
Units
Units
°C/W
V/ ns
mJ
mJ
°C
W
A
A
9/15/97

Related parts for IRF9410

IRF9410 Summary of contents

Page 1

... Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603 = 25°C Unless Otherwise Noted) A Symbol 25° 70° 25° 70° dv/ STG Symbol 9.1562A IRF9410 ® HEXFET Power MOSFET 30V DSS 0.030 5 D DS(on Maximum Units 30 ± 20 7.0 5 2.8 2 4.2 A 0. 150 ° ...

Page 2

... IRF9410 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... ° µ te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics Fig 2. Typical Output Characteristics IRF9410 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V 3.0V 20 µ LSE W IDTH 0° rain-to-S ource Voltage ( ° 5° ource-to-Drain Voltage ( Fig 4. Typical Source-Drain Diode ...

Page 4

... IRF9410 2.0 7. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 5. Normalized On-Resistance Vs. Temperature 7. Gate-to-Source V olta Fig 7. Typical On-Resistance Vs. Gate Voltage V = 10V GS 80 100 120 140 160 ° 4. 10V Drain Current (A) D Fig 6. Typical On-Resistance Vs. Drain Current Starting T , Junction Temperature (°C) J Fig 8 ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient RTE 0.001 0. Rectangular Pulse Duration (sec) 1 IRF9410 Total Gate Charge (nC) G Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage P DM Notes: 1. Duty factor Peak thJA 0 ...

Page 6

... IRF9410 Package Outline SO8 Outline 0.25 (. 0.25 ( .010 IME NS IO NING AND NCING 14.5M- 1982 LLING D IME CH IME ILLIME (INC TLIN TLINE MS -01 2AA . 5 DIM ENS INCLU RUS TRU SIO XCEE D 0.25 (.006). DIM ENS LDE RIN E.. 6 Part Marking Information ...

Page 7

... IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com .00 ( GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF9410 . . 4 2 9/97 ...

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