IRF9610 Vishay, IRF9610 Datasheet

MOSFET P-CH 200V 1.8A TO-220AB

IRF9610

Manufacturer Part Number
IRF9610
Description
MOSFET P-CH 200V 1.8A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF9610

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRF9610
IRF9611

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9610
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRF9610
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF9610
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF9610PBF
Manufacturer:
IOR/PB-FREE
Quantity:
7
Company:
Part Number:
IRF9610PBF
Quantity:
11 100
Company:
Part Number:
IRF9610PBF
Quantity:
20 000
Company:
Part Number:
IRF9610PBF
Quantity:
70 000
Part Number:
IRF9610S
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRF9610S
Manufacturer:
SEC
Quantity:
239
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not applicable.
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Maximum Power Dissipation
Inductive Current, Clamp
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 1.8 A, dI/dt ≤ 70 A/µs, V
(Ω)
TO-220
G
a
D
S
c
V
DD
GS
≤ V
= - 10 V
DS
G
, T
P-Channel MOSFET
J
Single
- 200
≤ 150 °C.
7.0
4.0
11
S
D
C
Power MOSFET
= 25 °C, unless otherwise noted
3.0
V
GS
6-32 or M3 screw
at - 10 V
T
for 10 s
C
= 25 °C
TO-220
IRF9610PbF
SiHF9610-E3
IRF9610
SiHF9610
T
T
C
FEATURES
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
C
= 100
= 25
SYMBOL
T
dV/dt
J
V
V
I
P
I
, T
I
DM
LM
DS
GS
D
D
stg
IRF9610, SiHF9610
- 55 to + 150
LIMIT
- 200
300
± 20
- 1.8
- 1.0
- 7.0
0.16
- 7.0
- 5.0
1.1
20
10
Vishay Siliconix
d
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
°C
W
V
A
A
Available
1

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IRF9610 Summary of contents

Page 1

... TO-220 contribute to its wide P-Channel MOSFET acceptance throughout the industry. TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 = 25 °C, unless otherwise noted 100 °C C for screw ≤ 150 ° IRF9610, SiHF9610 Vishay Siliconix SYMBOL LIMIT V - 200 DS V ± 1 1 7 7.0 LM dV/dt - 5.0 T ...

Page 2

... IRF9610, SiHF9610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... S09-0046-Rev. A, 19-Jan- 91080_03 x R DS(on) max. D(on 91080_04 Single Pulse (Transient Thermal Impedence Square Wave Pulse Duration (s) 1 IRF9610, SiHF9610 Vishay Siliconix - 2. 10 1.92 - 1.44 - 0.96 - 0.48 80 µs Pulse Test 0. Drain-to-Source Voltage ( Fig Typical Saturation Characteristics 2 10 Operation in this area limited DS(on) 2 ...

Page 4

... IRF9610, SiHF9610 Vishay Siliconix 2.0 80 µs Pulse Test V > max. DS D(on) DS(on) 1.6 1.2 0.8 0.4 0 0.48 - 0.96 - 1.44 I Drain Current ( 91080_06 Fig Typical Transconductance vs. Drain Current - 10.0 - 5.0 - 2.0 - 1.0 ° 150 C J ° 0 0.2 - 0.1 - 2.0 - 3.2 - 4.4 - 5.6 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature 100 T , Case Temperature (°C) C Fig Power vs. Temperature Derating Curve 0.05 Ω 0. IRF9610, SiHF9610 Vishay Siliconix 2.0 1.6 1.2 0.8 0.4 0 100 125 T , Case Temperature (°C) C 140 120 Fig Clamped Inductive Waveforms www.vishay.com 150 V DD ...

Page 6

... IRF9610, SiHF9610 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 17a - Switching Time Test Circuit t t d(on Fig. 17b - Switching Time Waveforms www.vishay.com d(off Charge Fig. 18a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9610, SiHF9610 Vishay Siliconix + + P. www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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