IRF9630S Vishay, IRF9630S Datasheet
IRF9630S
Specifications of IRF9630S
Available stocks
Related parts for IRF9630S
IRF9630S Summary of contents
Page 1
... IRF9630STRLPbF SiHF9630STL-E3 IRF9630STRL SiHF9630STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 6.5 A (see fig. 12 ≤ 150 ° IRF9630S, SiHF9630S Vishay Siliconix device design, low on-resistance 2 D PAK (TO263 IRF9630STRR a a SiHF9630STR SYMBOL LIMIT V - 200 DS V ± 6 4.0 ...
Page 2
... IRF9630S, SiHF9630S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... Fig Typical Output Characteristics, T Document Number: 91085 S09-0046-Rev. A, 19-Jan- µs Pulse Width ° 91085_03 = 25 ° 4 µs Pulse Width T = 150 ° 91085_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF9630S, SiHF9630S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
Page 4
... IRF9630S, SiHF9630S Vishay Siliconix 1200 MHz iss gs 1000 rss oss ds 800 600 400 200 Drain-to-Source Voltage ( 91085_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 6 100 Total Gate Charge (nC) 91085_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91085_07 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91085 S09-0046-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF9630S, SiHF9630S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
Page 6
... IRF9630S, SiHF9630S Vishay Siliconix 91085_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1200 Top 1000 Bottom 800 600 400 200 100 125 50 Starting T , Junction Temperature (° 6.5 A 150 Current regulator Same type as D.U.T. ...
Page 7
... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9630S, SiHF9630S Vishay Siliconix + + P. www.vishay.com 7 ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...