IRFB3207 IRF [International Rectifier], IRFB3207 Datasheet

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IRFB3207

Manufacturer Part Number
IRFB3207
Description
HEXFET Power MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet

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Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
I
I
I
P
V
dV/dt
T
T
E
I
E
R
R
R
R
Absolute Maximum Ratings
Avalanche Characteristics
Thermal Resistance
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
θJA
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Worldwide Best R
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
SOA
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy e
Avalanche Current c
Repetitive Avalanche Energy g
Junction-to-Case k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
Junction-to-Ambient (PCB Mount) , D
DS(on)
in TO-220
Parameter
Parameter
GS
GS
@ 10V
@ 10V
2
Pak jk
G
TO-220AB
IRFB3207
G
S
D
D
S
See Fig. 14, 15, 16a, 16b,
Typ.
0.50
–––
–––
–––
V
R
I
D
DSS
10lbxin (1.1Nxm)
DS(on)
-55 to + 175
IRFS3207
180c
130c
Max.
720
330
± 20
300
910
HEXFET
2.2
5.8
D
2
Pak
G
typ.
max.
D
S
Max.
0.45
–––
62
40
®
IRFSL3207
Power MOSFET
IRFB3207
IRFS3207
3.6m :
4.5m :
180A
75V
IRFSL3207
TO-262
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
G
°C
W
A
V
A
11/3/04
D
1
S

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IRFB3207 Summary of contents

Page 1

... Junction-to-Case k θJC R Case-to-Sink, Flat Greased Surface , TO-220 θCS R Junction-to-Ambient, TO-220 k θJA R Junction-to-Ambient (PCB Mount θJA www.irf.com G TO-220AB IRFB3207 Parameter @ 10V GS @ 10V GS Parameter 2 Pak jk IRFB3207 IRFS3207 IRFSL3207 ® HEXFET Power MOSFET V D DSS 3. typ. DS(on) 4.5m : max. I 180A ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

175°C 100.0 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 200 LIMITED BY ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10000 Duty Cycle = Single Pulse 1000 100 10 1 1.0E-06 1000 ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 45A ...

Page 7

D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...

Page 8

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN THE ASS EMBLY LINE "C" Note: "P" sembly line pos ition indicates "Lead-Free" OR www.irf.com (Dimensions ...

Page 10

T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" in assembly line pos ition indicates "Lead-Free" (Dimensions are shown ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

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