IRFL110 Vishay, IRFL110 Datasheet
IRFL110
Specifications of IRFL110
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IRFL110 Summary of contents
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... IRFL110PbF SiHFL110-E3 IRFL110 SiHFL110 = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 3.0 A (see fig. 12 ≤ 150 °C. J IRFL110, SiHFL110 Vishay Siliconix device design, low on-resistance SOT-223 a SiHFL110TR-GE3 a IRFL110TRPbF a SiHFL110T-E3 a IRFL110TR a SiHFL110T SYMBOL LIMIT V 100 DS V ± 1 0.96 ...
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... IRFL110, SiHFL110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...
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... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91192 S10-1257-Rev. C, 31-May- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFL110, SiHFL110 Vishay Siliconix www.vishay.com 3 ...
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... IRFL110, SiHFL110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91192 S10-1257-Rev. C, 31-May-10 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91192 S10-1257-Rev. C, 31-May-10 IRFL110, SiHFL110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...
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... IRFL110, SiHFL110 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig.14 - For N-Channel IRFL110, SiHFL110 Vishay Siliconix + + www.vishay.com 7 ...
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... 0.10 (0.004 MILLIMETERS MAX. 1.80 0.85 3.15 0.35 6.70 3.70 2.30 BSC 4.60 BSC 7.29 - 0.061 BSC - 10' Package Information Vishay Siliconix A 0.08 (0.003 θ INCHES MIN. MAX. 0.061 0.071 0.026 0.033 0.116 0.124 0.010 0.014 0.248 0.264 0.130 0.146 0.0905 BSC ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...