IRFL214 Vishay, IRFL214 Datasheet
IRFL214
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IRFL214 Summary of contents
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... Power dissipation of greater than 1. possible in a typical surface mount application. SOT-223 IRFL214PbF SiHFL214-E3 IRFL214 SiHFL214 = 25 °C, unless otherwise noted ° 100 ° ° °C A IRFL214, SiHFL214 Vishay Siliconix device design, low on-resistance SOT-223 a IRFL214TRPbF a SiHFL214T-E3 a IRFL214TR a SiHFL214T SYMBOL LIMIT V 250 DS V ± 0. ...
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... IRFL214, SiHFL214 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 128 mH ≤ 2.7 A, dI/dt ≤ 65 A/µs, V ≤ ...
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... TEST CONDITIONS MOSFET symbol I S showing the integral reverse junction diode ° 0. ° 2.7 A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated Fig Normalized On-Resistance vs. Temperature IRFL214, SiHFL214 Vishay Siliconix MIN. TYP. MAX 190 390 b - 0.64 1.3 and L S Fig Typical Transfer Characteristics www ...
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... IRFL214, SiHFL214 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91194 S09-0927-Rev. B, 25-May-09 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91194 S09-0927-Rev. B, 25-May-09 IRFL214, SiHFL214 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...
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... IRFL214, SiHFL214 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig.14 - For N-Channel IRFL214, SiHFL214 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...