IRFPE50 Vishay, IRFPE50 Datasheet

MOSFET N-CH 800V 7.8A TO-247AC

IRFPE50

Manufacturer Part Number
IRFPE50
Description
MOSFET N-CH 800V 7.8A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFPE50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 4.7A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
7.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.8 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFPE50

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91248
S-81368-Rev. A, 21-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 7.8 A, dI/dt ≤ 140 A/µs, V
= 50 V, starting T
(Ω)
TO-247
a
G
J
D
= 25 °C, L = 23 mH, R
S
c
a
a
b
DD
V
GS
≤ 600 V, T
= 10 V
G
N-Channel MOSFET
Single
800
200
110
24
J
G
≤ 150 °C.
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
1.2
GS
AS
6-32 or M3 screw
at 10 V
= 7.8 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFPE50PbF
SiHFPE50-E3
IRFPE50
SiHFPE50
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole. It also provides greater creepage distance between
pins to meet the requirements of most safety specifications.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFPE50, SiHFPE50
design,
- 55 to + 150
LIMIT
300
± 20
800
770
190
7.8
4.9
1.5
7.8
2.0
1.1
31
19
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFPE50 Summary of contents

Page 1

... TO-247 IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 7.8 A (see fig. 12 ≤ 150 °C. J IRFPE50, SiHFPE50 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 800 DS V ± 7 4 1.5 E 770 AS I 7.8 ...

Page 2

... IRFPE50, SiHFPE50 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91248 S-81368-Rev. A, 21-Jul- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 150 °C C IRFPE50, SiHFPE50 Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFPE50, SiHFPE50 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91248 S-81368-Rev. A, 21-Jul-08 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91248 S-81368-Rev. A, 21-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFPE50, SiHFPE50 Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFPE50, SiHFPE50 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91248 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRFPE50, SiHFPE50 Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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