IRFR5305 International Rectifier, IRFR5305 Datasheet

IRFR5305

Manufacturer Part Number

IRFR5305

Description

P CHANNEL MOSFET, -55V, 31A, D-PAK

Manufacturer

International Rectifier

Type

Power MOSFETr

Datasheet

1.IRFU5305.pdf (11 pages)

Specifications of IRFR5305

Transistor Polarity

P Channel

Continuous Drain Current Id

-31A

Drain Source Voltage Vds

-55V

On Resistance Rds(on)

65mohm

Rds(on) Test Voltage Vgs

-10V

Threshold Voltage Vgs Typ

-4V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.065Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±20V

Continuous Drain Current

31A

Power Dissipation

110W

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

DPAK

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Download datasheet (162Kb)

Description

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET

the designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

STG

@ T

Surface Mount (IRFR5305)

Advanced Process Technology

Ultra Low On-Resistance

Straight Lead (IRFU5305)

Fast Switching

Fully Avalanche Rated

= 100°C

= 25°C

Power MOSFETs are well known for, provides

Continuous Drain Current, V

Pulsed Drain Current †

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚†

Avalanche Current†

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ†

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient**

Parameter

@ -10V

Typ.

IRFR5305

300 (1.6mm from case )

–––

D-Pak

HEXFET

10 lbf•in (1.1N•m)

-55 to + 175

IRFR/U5305

Max.

-110

0.71

± 20

-5.0

110

280

-31

-22

-16

DS(on)

IRFU5305

Power MOSFET

Max.

DSS

I-Pak

110

1.4

= -31A

= 0.065

= -55V

PD - 91402A

Units

W/°C

°C/W

V/ns

°C

10/23/00

Related parts for IRFR5305

IRFR5305 Summary of contents

Page 1

... Ultra Low On-Resistance l l Surface Mount (IRFR5305) Straight Lead (IRFU5305 Advanced Process Technology Fast Switching l Fully Avalanche Rated l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ® ...

Page 2

IRFR/U5305 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRFR5305 International Rectifier, IRFR5305 Datasheet

IRFR5305

Specifications of IRFR5305

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IRFR5305 Summary of contents

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