IRFU220 Vishay, IRFU220 Datasheet

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IRFU220

Manufacturer Part Number
IRFU220
Description
MOSFET N-CH 200V 4.8A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFU220

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRFU220IR

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91270
S-82991-Rev. B, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
(TO-252)
SD
D
DD
(Max.) (nC)
DPAK
(nC)
(nC)
(V)
≤ 5.2 A, dI/dt ≤ 95 A/µs, V
= 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
DPAK (TO-252)
IRFR220PbF
SiHFR220-E3
IRFR220
SiHFR220
= 25 °C, L = 14 mH, R
G
c
D S
a
a
DD
b
V
≤ V
GS
e
DS
= 10 V
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
200
3.0
7.9
14
G
DPAK (TO-252)
IRFR220TRLPbF
SiHFR220TL-E3
IRFR220TRL
SiHFR220TL
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
IRFR220, IRFU220, SiHFR220, SiHFU220
0.80
GS
AS
at 10 V
= 4.8 A (see fig. 12).
a
a
T
T
C
A
for 10 s
a
a
= 25 °C
= 25 °C
T
T
C
C
DPAK (TO-252)
IRFR220TRPbF
SiHFR220T-E3
IRFR220TR
SiHFR220T
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR220, SiHFR220)
• Straight Lead (IRFU220, SiHFU220)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
a
a
SYMBOL
T
a
a
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
DPAK (TO-252)
IRFR220TRRPbF
SiHFR220TR-E3
IRFR220TRR
SiHFR220TR
design,
- 55 to + 150
a
a
LIMIT
0.020
260
± 20
0.33
200
230
4.8
3.0
4.8
4.2
2.5
5.0
19
42
low
a
a
Vishay Siliconix
d
on-resistance
IPAK (TO-251)
IRFU220PbF
SiHFU220-E3
IRFU220
SiHFU220
www.vishay.com
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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