IRFW/IZ44A FAIRCHILD [Fairchild Semiconductor], IRFW/IZ44A Datasheet

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IRFW/IZ44A

Manufacturer Part Number
IRFW/IZ44A
Description
Advanced Power MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©1999 Fairchild Semiconductor Corporation
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
T
When mounted on the minimum pad size recommended (PCB Mount).
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 C Operating Temperature
Lower Leakage Current: 10 A (Max.) @ V
Lower R
Symbol
Symbol
J
dv/dt
R
R
R
V
V
E
E
I
I
, T
P
I
T
DM
AR
DSS
D
GS
AR
AS
JC
JA
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
: 0.020
(Typ.)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
A
C
=25 C)
=25 C)
C
C
DS
=25 C)
=100 C)
*
= 60V
*
(3)
(1)
(2)
(1)
(1)
Typ.
--
--
--
- 55 to +175
IRFW/IZ44A
35.4
12.6
0.84
Value
200
857
126
300
1
5.5
3.8
60
50
50
BV
R
I
20
1. Gate 2. Drain 3. Source
D
3
D
DS(on)
2
-PAK
DSS
= 50 A
Max.
1.19
62.5
40
= 0.024
= 60 V
2
1
2
3
I
2
-PAK
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
W
V
A
A
V
A
C
Rev. B

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IRFW/IZ44A Summary of contents

Page 1

... Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Junction-to-Ambient JA R Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation IRFW/IZ44A BV DSS R DS(on -PAK = 60V Gate 2. Drain 3. Source ...

Page 2

... IRFW/IZ44A Electrical Characteristics (T Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... C iss C oss rss Drain-Source Voltage [V] DS IRFW/IZ44A Fig 2. Transfer Characteristics ...

Page 4

... IRFW/IZ44A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ C] J Fig 9. Max. Safe Operating Area ...

Page 5

... R V out DUT 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Vary t to obtain required peak DUT 10V t p IRFW/IZ44A V GS 10V Resistor L V out 90 0.5 rated 10 ...

Page 6

... IRFW/IZ44A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) I , Body Diode Forward Current DUT ) DUT ) + Same Type as DUT dv/dt controlled controlled by Duty Factor D S Gate Pulse Width -------------------------- Gate Pulse Period ...

Page 7

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ...

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