IRFZ34N International Rectifier Corp., IRFZ34N Datasheet

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IRFZ34N

Manufacturer Part Number
IRFZ34N
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Thermal Resistance
Description
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
I
I
I
P
V
E
I
E
dv/dt
T
T
AR
D
D
DM
R
R
R
AS
AR
J
STG
D
GS
@ T
@ T
@T
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Ease of Paralleling
JC
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Min.
––––
––––
––––
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
Max.
0.45
100
± 20
TO-220AB
6.8
5.0
29
20
68
65
16
Typ.
––––
––––
0.50
®
IRFZ34N
Power MOSFET
R
DS(on)
V
DSS
I
PD -9.1276C
D
= 29A
Max.
––––
2.2
= 0.040
62
= 55V
Units
W/°C
V/ns
Units
mJ
mJ
°C
W
°C/W
A
V
A
8/25/97

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IRFZ34N Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA G Parameter @ 10V GS @ 10V GS Parameter PD -9.1276C IRFZ34N ® HEXFET Power MOSFET 55V DSS R = 0.040 DS(on 29A D S TO-220AB Max 100 68 0 ...

Page 2

... IRFZ34N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 3. Typical Transfer Characteristics 1000 100 20 µ LSE ° 0.1 10 100 IRFZ34N VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4. µ 175 ° Drain-to-Source V oltage ( Fig 2 ...

Page 4

... IRFZ34N 1200 1000 800 600 400 C rss 200 rain-to-S ource Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° 5°C ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRFZ34N D.U. Pulse Width µs Duty Factor ...

Page 6

... IRFZ34N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform L D.U. 0.01 V (BR)DSS V DD 140 120 100 ...

Page 7

... Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Current di/dt Diode Recovery dv/dt Forward Drop 5% IRFZ34N + =10V ...

Page 8

... IRFZ34N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100 ES SION IN G & TOLE RA NC ING Y14.5M , 1982 OLLIN SION : INC H ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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