IRFZ46Z International Rectifier, IRFZ46Z Datasheet

IRFZ46Z

Manufacturer Part Number

IRFZ46Z

Description

MOSFET N-CH 55V 51A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRFZ46Z.pdf (13 pages)

Specifications of IRFZ46Z

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

13.6 mOhm @ 31A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

51A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

46nC @ 10V

Input Capacitance (ciss) @ Vds

1460pF @ 25V

Power - Max

82W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFZ46Z

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ46Z

Manufacturer:

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ46ZL

Manufacturer:

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ46ZLPBF

Manufacturer:

INTERNATIONAL RECTIFIER

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFZ46ZLPBF

Manufacturer:

Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ46ZPBF

Manufacturer:

Quantity:

10 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFZ46ZPBF

Manufacturer:

INTERNATIONAL RECTIFIER

Quantity:

30 000

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Features

Description

Specifically designed for Automotive applica-

tions, this HEXFET

latest processing techniques to achieve extremely

low on-resistance per silicon area. Additional

features of this design are a 175°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating . These

features combine to make this design an ex-

tremely efficient and reliable device for use in

Automotive applications and a wide variety of

other applications.

HEXFET

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Power MOSFET utilizes the

AUTOMOTIVE MOSFET

Parameter

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

TO-220AB

IRFZ46Z

HEXFET

300 (1.6mm from case )

See Fig.12a,12b,15,16

Typ.

0.50

–––

10 lbf•in (1.1N•m)

IRFZ46ZS

-55 to + 175

Max.

0.54

200

± 20

Pak

DS(on)

Power MOSFET

IRFZ46ZS

IRFZ46ZL

Max.

1.84

–––

DSS

IRFZ46Z

= 51A

= 13.6mΩ

PD - 94769

= 55V

IRFZ46ZL

TO-262

Units

W/°C

°C/W

°C

Related parts for IRFZ46Z

IRFZ46Z Summary of contents

Page 1

... Parameter 94769 IRFZ46Z IRFZ46ZS IRFZ46ZL ® HEXFET Power MOSFET 55V DSS R = 13.6mΩ DS(on 51A Pak TO-262 IRFZ46ZS IRFZ46ZL Max. Units 200 82 W 0.54 W/°C ± See Fig.12a,12b,15, - 175 °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. Max. ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient ––– DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 70 TOP Single Pulse BOTTOM 1% Duty Cycle 31A ...

Page 8

SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...

Page 10

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 ASS EMBLY LINE "L" For GB Production T HIS IS AN IRF530S WIT ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 11 ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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