IRFZ48 Vishay, IRFZ48 Datasheet

MOSFET N-CH 60V 50A TO-220AB

IRFZ48

Manufacturer Part Number
IRFZ48
Description
MOSFET N-CH 60V 50A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRFZ48

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRFZ48
Manufacturer:
ST
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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Uses IRFZ48, SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90377
S10-2695-Rev. B, 29-Nov-10
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
2
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
PAK
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 72 A, dI/dt  200 A/μs, V
= 25 V, Starting T
(TO-262)
()
G
D
S
G
a, e
D
D
J
2
PAK (TO-263)
= 25 °C, L = 22 μH, R
S
f
c, e
b, e
DD
V
GS
 V
= 10 V
DS
, T
J
G
Single
 175 °C.
110
60
29
36
N-Channel MOSFET
g
= 25 , I
d
C
D
SiHFZ48S-GE3
IRFZ48SPbF
SiHFZ48S-E3
IRFZ48S
SiHFZ48S
2
= 25 °C, unless otherwise noted)
Power MOSFET
PAK (TO-263)
0.018
V
D
S
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
GS
AS
at 10 V
= 72 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Advanced Process Technology
• Surface Mount (IRFZ48S, SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest
on-resistance in any existing surface mount package. The
D
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ48L, SiHFZ48L) is available
for low-profile applications.
2
Definition
PAK is suitable for high current applications because of
2
D
-
-
-
IRFZ48STRL
SiHFZ48STL
PAK is a surface mount power package capable of
2
PAK (TO-263)
power
SYMBOL
T
dV/dt
J
V
V
E
I
, T
P
DM
I
GS
DS
AS
D
D
stg
capability
- 55 to + 175
and
LIMIT
± 20
290
100
190
300
1.3
3.7
4.5
60
50
50
I
-
IRFZ48LPbF
SiHFZ48L-E3
-
-
2
Vishay Siliconix
PAK (TO-262)
the
lowest
www.vishay.com
UNIT
W/°C
V/ns
possible
mJ
°C
W
V
A
1

Related parts for IRFZ48

IRFZ48 Summary of contents

Page 1

... A, dI/dt  200 A/μs, V  1.6 mm from case. e. Uses IRFZ48, SiHFZ48 data and test conditions. f. Calculated continuous current based on maximum allowable junction temperature containing terminations are not RoHS compliant, exemptions may apply Document Number: 90377 S10-2695-Rev. B, 29-Nov-10 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Power MOSFET FEATURES • ...

Page 2

... Body Diode Reverse Recovery Charge Forward Turn-On Time Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  Uses IRFZ48/SiHFZ48 data and test conditions. d. Calculated continuous current based on maximum allowable junction temperature. www.vishay.com 2 SYMBOL TYP ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 90377 S10-2695-Rev. B, 29-Nov-10 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90377 S10-2695-Rev. B, 29-Nov-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90377 S10-2695-Rev. B, 29-Nov-10 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90377. Document Number: 90377 S10-2695-Rev. B, 29-Nov-10 IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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