IRL1004S International Rectifier, IRL1004S Datasheet
IRL1004S
Specifications of IRL1004S
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IRL1004S Summary of contents
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... Junction-to-Ambient ( PCB Mounted,steady-state)* JA www.irf.com HEXFET Pak IRL1004S Max. @ 10V 130 GS @ 10V GS - 175 300 (1.6mm from case) Typ. ––– ––– 91644A IRL1004S IRL1004L ® Power MOSFET V = 40V DSS R = 0.0065 DS(on 130A D TO-262 IRL1004L Units 92 A 520 3.8 W 200 W 1.3 W/° ...
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... IRL1004S/1004L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Fig 2. Typical Output Characteristics 2 2.0 ° 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 0 7.0 8.0 9.0 Fig 4. Normalized On-Resistance IRL1004S/1004L VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 2.7V 2.7V 20µs PULSE WIDTH T = 175 C ° Drain-to-Source Voltage (V) DS 130A ...
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... IRL1004S/1004L 10000 1MHz iss rss 8000 oss iss 6000 C oss 4000 2000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 10 ° 0.1 0.0 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...
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... Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRL1004S/1004L R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 ...
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... IRL1004S/1004L V DS D.U. 4 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 L 1800 1500 + 1200 0.01 900 600 300 V (BR)DSS 0 25 Starting T , Junction Temperature ( Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. ...
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... Low Leakage Inductance Current Transformer - - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® HEXFET Power MOSFETs IRL1004S/1004L + + =10V ...
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... IRL1004S/1004L 2 D Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) - AX. 2 1 5.49 (.6 10) 1 4.73 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 0 .08 (.20 0) 0.25 (. FTER & 4. TRO L LIN ATSINK & SIO Pak Part Marking Information TIO (. (.16 5) 1 ...
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... TO-262 Package Outline TO-262 Part Marking Information www.irf.com IRL1004S/1004L 9 ...
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... IRL1004S/1004L 2 D Pak Tape & Reel Information (. (. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...