IRL1104 International Rectifier, IRL1104 Datasheet
IRL1104
Specifications of IRL1104
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IRL1104 Summary of contents
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... CS R Junction-to-Ambient JA www.irf.com G @ 10V GS @ 10V GS 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– PD -91805 IRL1104 ® HEXFET Power MOSFET 40V DSS R = 0.008 DS(on 104A… TO-220AB Max. Units 104… ...
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... IRL1104 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resis- DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... DS 20µs PULSE WIDTH 1 2.0 4.0 6 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com 1000 ° 10 100 ° 50V 8.0 10.0 IRL1104 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 2.7V 10 20µs PULSE WIDTH T = 175 0.1 1 ...
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... IRL1104 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ° 175 C J 100 10 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRL1104 D.U. 4.5V Pulse Width µs Duty Factor d(on) ...
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... IRL1104 0 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 800 1 5V 600 400 + 200 Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit ...
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... Low Leakage Inductance Current Transformer - - dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% HEXFET power MOSFETs „ P.W. Period * V =10V IRL1104 7 ...
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... IRL1104 TO-220AB Package Details Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82 LIN TO-220AB Part Marking WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...