IRL2203 IRF [International Rectifier], IRL2203 Datasheet

no-image

IRL2203

Manufacturer Part Number
IRL2203
Description
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?)
Manufacturer
IRF [International Rectifier]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL2203
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRL2203N
Manufacturer:
IR
Quantity:
20 170
Part Number:
IRL2203N
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRL2203NL
Manufacturer:
IR
Quantity:
5 550
Part Number:
IRL2203NL
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRL2203NPBF
Manufacturer:
IR
Quantity:
27 200
Part Number:
IRL2203NPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRL2203NPBF
Quantity:
2 500
Company:
Part Number:
IRL2203NPBF
Quantity:
25 780
Part Number:
IRL2203NS
Manufacturer:
341241-6
Quantity:
412
Company:
Part Number:
IRL2203NSTRPBF
Quantity:
12 002
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Power Dissipation
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter
The low thermal
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
TO-220AB
116
Max.
400
180
± 16
1.2
5.0
82
60
18
IRL2203N
®
R
Power MOSFET
DS(on)
Max.
I
V
0.85
–––
D
62
DSS
= 116A
= 7.0m
PD - 91366
= 30V
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1
3/16/01

Related parts for IRL2203

IRL2203 Summary of contents

Page 1

... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G The low thermal @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– 0.50 ––– 91366 IRL2203N ® HEXFET Power MOSFET 30V DSS R = 7.0m DS(on 116A D S TO-220AB Max. Units 116 ...

Page 2

... IRL2203N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 2.0 ° 175 C J 1.5 1.0 0.5 = 15V 0.0 -60 -40 -20 0 6.0 7.0 Fig 4. Normalized On-Resistance IRL2203N VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.7V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS 100A V = 10V 100 120 140 160 180 ° ...

Page 4

... IRL2203N 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 C oss 2000 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRL2203N D.U. Pulse Width µs Duty Factor ...

Page 6

... IRL2203N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 600 1 5V 500 ...

Page 7

... R I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% = 5.0V for Logic Level and 3V Drive Devices GS ® HEXFET power MOSFETs IRL2203N + + P.W. Period [ ] *** V =10V ...

Page 8

... IRL2203N Package Outline TO-220AB Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

Related keywords