IRL2203N International Rectifier, IRL2203N Datasheet

MOSFET N-CH 30V 116A TO-220AB

IRL2203N

Manufacturer Part Number
IRL2203N
Description
MOSFET N-CH 30V 116A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRL2203N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
116A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 4.5V
Input Capacitance (ciss) @ Vds
3290pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL2203N

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Part Number
Manufacturer
Quantity
Price
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Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
www.irf.com
Description
I
I
I
P
V
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Power Dissipation
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
®
Power MOSFETs from International
Parameter
Parameter
The low thermal
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.50
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
S
D
TO-220AB
116
Max.
400
180
± 16
1.2
5.0
82
60
18
IRL2203N
®
R
Power MOSFET
DS(on)
Max.
I
V
0.85
–––
D
62
DSS
= 116A
= 7.0m
PD - 91366
= 30V
Units
Units
W/°C
°C/W
V/ns
mJ
°C
W
A
V
A
1
3/16/01

Related parts for IRL2203N

IRL2203N Summary of contents

Page 1

... JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G The low thermal @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– 0.50 ––– 91366 IRL2203N ® HEXFET Power MOSFET 30V DSS R = 7.0m DS(on 116A D S TO-220AB Max. Units 116 82 ...

Page 2

... IRL2203N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 2.0 ° 175 C J 1.5 1.0 0.5 = 15V 0.0 -60 -40 -20 0 6.0 7.0 Fig 4. Normalized On-Resistance IRL2203N VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.7V 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage (V) DS ...

Page 4

... IRL2203N 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 C oss 2000 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.1 0.0 0.4 0.8 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... RESPONSE) 0.01 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 t , Rectangular Pulse Duration (sec) 1 IRL2203N D.U. Pulse Width µs Duty Factor ...

Page 6

... IRL2203N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 600 1 5V 500 400 + - 300 200 100 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit I D TOP ...

Page 7

... R I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period D = P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% = 5.0V for Logic Level and 3V Drive Devices GS ® HEXFET power MOSFETs IRL2203N + + P.W. Period [ ] *** V =10V ...

Page 8

... IRL2203N Package Outline TO-220AB Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82 LIN Part Marking Information TO-220AB WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 3 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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