IRL3103S International Rectifier, IRL3103S Datasheet
IRL3103S
Specifications of IRL3103S
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IRL3103S Summary of contents
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... Advanced Process Technology l Surface Mount (IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature l l Fast Switching Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ...
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... IRL3103S/IRL3103L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ° 100 20µs PULSE WIDTH 1 2.0 3.0 4.0 5 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRL3103S/IRL3103L 1000 TOP BOTTOM 100 10 ° 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 2.0 ° 175 C J 1.5 1.0 ...
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... IRL3103S/IRL3103L 3000 1MHz iss rss gd 2500 oss 2000 C iss 1500 C oss 1000 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.1 0.0 0.4 0.8 1.2 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...
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... Case Temperature 0.50 0.20 0.10 0.05 0.1 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRL3103S/IRL3103L Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms ...
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... IRL3103S/IRL3103L Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 240 1 5V 200 160 + - 120 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit I D TOP 14A ...
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... Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com IRL3103S/IRL3103L Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance Ground Plane ƒ Low Leakage Inductance Current Transformer - - dv/dt controlled controlled by Duty Factor " ...
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... IRL3103S/IRL3103L 2 D Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) - AX. 2 1 5.49 (.6 10) 1 4.73 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 0 .08 (.20 0) 0.25 (. FTER & 4. TRO L LIN ATSINK & SIO Pak Part Marking Information TIO (. (.16 5) 1 ...
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... TO-262 Package Outline TO-262 Part Marking Information www.irf.com IRL3103S/IRL3103L 9 ...
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... IRL3103S/IRL3103L 2 D Pak Tape & Reel Information TIO . -418 . LIN SIO LIM DIM DIST WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 (. (. (. (. 1 1 .42 (. .22 (. .75 (. 0 .25 (. 0 13.50 (.532 ) 2 7.4 0 (1.079 ) 12.80 (.504 ) 2 3.9 0 (.9 41 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...