IRL5602S International Rectifier, IRL5602S Datasheet
IRL5602S
Specifications of IRL5602S
Q803261
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IRL5602S Summary of contents
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... Fully Avalanche Rated l Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS DV Breakdown Voltage Temp. Coefficient /DT (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total ...
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VGS TOP -15V -12V -10V -7.0V -5.0V -4.5V -2.7V BOTTOM -2.0V 10 -2.0V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...
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1MHz iss 2400 rss oss ds gd 2000 C iss 1600 C oss 1200 800 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL ...
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D.U DRIVER -20V 0. Charge 6 1000 800 600 400 15V 200 0 25 Starting T ...
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D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + · · ƒ · · · · Period D = P.W. Waveform SD Body Diode Forward Current ...
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A - MAX. 2 1.78 (.070) 15.49 (.610) 1.27 (.050) 14.73 (.580 1.40 (.055) 3X 1.14 (.045) 0.93 (.037) 3X 0.69 (.027) 5.08 (.200) 0.25 (.010) NOTES: 1 DIMENSIONS AFTER SOLDER ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...